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What is DMN2010UDZ?

This electronic component, produced by the manufacturer "Diodes", performs the same function as "DUAL N-CHANNEL ENHANCEMENT MODE MOSFET".


DMN2010UDZ Datasheet PDF - Diodes

Part Number DMN2010UDZ
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturers Diodes 
Logo Diodes Logo 


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DMN2010UDZ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
24V
RDS(ON) Max
7m@ VGS = 4.5V
7.8m@ VGS = 4.0V
8.2m@ VGS = 3.7V
9.5m@ VGS = 3.1V
10.5m@ VGS = 2.5V
ID
TA = +25°C
11.0A
10.8A
10.6A
10.5A
10.0A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
Power Management Functions
Battery Pack
Load Switch
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate > 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2535-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.012 grams (Approximate)
U-DFN2535-6
DD
ESD PROTECTED
D
G1 G2
2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2010UDZ-7
Case
U-DFN2535-6
Packaging
3,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN2535-6
R11
R11 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 15 for 2015)
WW = Week Code (01 to 53)
DMN2010UDZ
Document number: DS37730 Rev. 3 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated

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DMN2010UDZ equivalent
DMN2010UDZ
100
RDS(ON) Limited
10
PW=100μs
1 PW=10ms
PW=100ms
PW=
1ms
0.1
0.01
TJ(MAX)=150
TA=25
PW=1s
Single Pulse
DUT on 1*MRP board
PW=10s
VGS=4.5V
DC
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
100
1
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.9
D=0.7
0.01
D=0.02
D=0.01
D=0.005
0.001
D=Single Pulse
0.0001
0.001
RθJA(t)=r(t) * RθJA
RθJA=184/W
Duty Cycle, D=t1 / t2
0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
DMN2010UDZ
Document number: DS37730 Rev. 3 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated


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Part Details

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Part NumberDescriptionMFRS
DMN2010UDZThe function is DUAL N-CHANNEL ENHANCEMENT MODE MOSFET. DiodesDiodes

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