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PDF DMHC4035LSDQ Data sheet ( Hoja de datos )
| Número de pieza | DMHC4035LSDQ | |
| Descripción | 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE | |
| Fabricantes | Diodes | |
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DMHC4035LSDQ
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
N-Channel
P-Channel
V(BR)DSS
40V
-40V
RDS(ON) max
45mΩ @ VGS = 10V
58mΩ @ VGS = 4.5V
65mΩ @ VGS = -10V
100mΩ @ VGS = -4.5V
ID max
TA = +25°C
4.5A
4A
-3.7A
-2.9A
Description and Applications
This new generation complementary MOSFET H-Bridge features
2 N and 2 P channel in an SOIC package. Qualified to AECQ101 the
H bridge is ideally suited to driving :
• Solenoids
• DC Motors
• Audio Outputs
Features
• 2 x N + 2 x P channels in a SOIC package
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate)
SO-8
H-Bridge
Top View
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 5)
Notes:
Part Number
DMHC4035LSDQ-13
Compliance
Automotive
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
C4035LS
YY WW
1
DMHC4035LSDQ
Document number: DS37219 Rev. 1 - 2
4
= Manufacturer’s Marking
C4035LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
1 of 9
www.diodes.com
May 2014
© Diodes Incorporated
1 page  
DMHC4035LSDQ
0.08
0.07
0.06
0.05
VGS = 5V
ID = 5A
0.04
0.03
0.02
VGS = 10V
ID = 10A
0.01
0-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
20
18
16
14
12
10
8
6
4
2
00
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
VDS = 20V
ID = 3.9A
8
2.5
2
ID = 1mA
1.5 ID = 250µA
1
0.5-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1000
Ciss
100
Coss
Crss
10 0
100
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
6
4
2
00 2 4 6 8 10 12 14
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DC
1 PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 TJ(max) = 150°C
TA = 25°C
PW = 1ms
PW = 100µs
VGS = 4.5V
Single Pulse
0.01 DUT on 1 * MRP Board
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMHC4035LSDQ
Document number: DS37219 Rev. 1 - 2
5 of 9
www.diodes.com
May 2014
© Diodes Incorporated
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