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PDF DMG7702SFG Data sheet ( Hoja de datos )
| Número de pieza | DMG7702SFG | |
| Descripción | 30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMG7702SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
POWERDI®
Product Summary
V(BR)DSS
30V
RDS(ON)
10mΩ @ VGS = 10V
15mΩ @ VGS = 4.5V
Package
ID
TA = +25°C
POWERDI3333-8
12 A
9.5A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Backlighting
• Power Management Functions
• DC-DC Converters
Features
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
Low RDS(ON) – minimize conduction losses
Low VSD – reducing the losses due to body diode conduction
Low Qrr – lower Qrr of the integrated Schottky reduces body
diode switching losses
Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: POWERDI3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate
Top View
S Pin 1
S
S
G
D
D
D
D
Bottom View
8765
123 4
Top View
Pin Configuration
Drain
Gate
Source
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMG7702SFG-7
DMG7702SFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
DMG7702SFG
Document number: DS35248 Rev. 6 - 2
1 of 8
www.diodes.com
July 2012
© Diodes Incorporated
1 page  
DMG7702SFG
0.05
0.04
0.03
VGS = 2.5V
0.02
0.01
0
0
1.6
1.4
1.2
VGS = 4.5V
VGS = 10V
5 10 15 20 25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
VGS = 10V
ID = 5A
VGS = 10V
ID = 10A
1.0
0.8
0.020
VGS = 10V
0.015
0.010
0.005
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
0.03
5 10 15 20 25
ID, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
30
0.02
0.01
VGS = 10V
ID = 10A
VGS = 10V
ID = 5A
0.6
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
3.0
2.5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 On-Resistance Variation with Temperature
30
25
2.0
1.5 ID = 1mA
20 TA = 25°C
15
1.0 ID = 250µA
10
0.5 5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
DMG7702SFG
Document number: DS35248 Rev. 6 - 2
5 of 8
www.diodes.com
July 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DMG7702SFG.PDF ] | |
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