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What is CY7C1021DV33?

This electronic component, produced by the manufacturer "Cypress Semiconductor", performs the same function as "1-Mbit (64 K x 16) Static RAM".


CY7C1021DV33 Datasheet PDF - Cypress Semiconductor

Part Number CY7C1021DV33
Description 1-Mbit (64 K x 16) Static RAM
Manufacturers Cypress Semiconductor 
Logo Cypress Semiconductor Logo 


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CY7C1021DV33
1-Mbit (64 K × 16) Static RAM
1-Mbit (64 K × 16) Static RAM
Features
Temperature ranges
Industrial: –40 °C to 85 °C
Automotive-A: –40 °C to 85 °C
Pin-and function-compatible with CY7C1021CV33
High speed
tAA = 10 ns
Low active power
ICC = 60 mA @ 10 ns
Low CMOS standby power
ISB2 = 3 mA
2.0 V data retention
Automatic power-down when deselected
CMOS for optimum speed/power
Independent control of upper and lower bits
Available in Pb-free 44-pin 400-Mil wide molded SOJ, 44-pin
TSOP II and 48-ball VFBGA packages
Logic Block Diagram
DATA IN DRIVERS
Functional Description
The CY7C1021DV33 is a high-performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an
automatic power-down feature that significantly reduces power
consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is
LOW, then data from I/O pins (I/O0 through I/O7), is written into
the location specified on the address pins (A0 through A15). If
Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8
through I/O15) is written into the location specified on the address
pins (A0 through A15).
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins will
appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then
data from memory will appear on I/O8 to I/O15. See the truth table
at the end of this data sheet for a complete description of Read
and Write modes.
The input/output pins (I/O0 through I/O15) are placed in a
high-impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a Write operation (CE
LOW, and WE LOW).
The CY7C1021DV33 is available in Pb-free 44-pin 400-Mil wide
Molded SOJ, 44-pin TSOP II and 48-ball VFBGA packages.
For a complete list of related resources, click here.
A7
A6
A5
A4
64K x 16
A3 RAM Array
A2
A1
A0
COLUMN DECODER
I/O0–I/O7
I/O8–I/O15
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05460 Rev. *H
• San Jose, CA 95134-1709 • 408-943-2600
Revised November 24, 2014

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CY7C1021DV33 equivalent
CY7C1021DV33
Capacitance
Parameter [3]
Description
CIN
COUT
Input capacitance
Output capacitance
Thermal Resistance
Parameter [3]
Description
JA Thermal resistance
(junction to ambient)
JC Thermal resistance
(junction to case)
Test Conditions
TA = 25 C, f = 1 MHz, VCC = 3.3 V
Test Conditions
Still Air, soldered on a 3 × 4.5
inch, four-layer printed circuit
board
SOJ
59.52
36.75
TSOP II
53.91
21.24
AC Test Loads and Waveforms
Figure 1. AC Test Loads and Waveforms [4]
Max Unit
8 pF
8 pF
VFBGA
36
9
Unit
C/W
C/W
OUTPUT
Z = 50
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
50
1.5 V
(a)
30 pF*
3.0 V
GND
ALL INPUT PULSES
90%
90%
10%
10%
Rise Time: 1 V/ns
(b) Fall Time: 1 V/ns
High-Z characteristics: R 317
3.3 V
OUTPUT
5 pF
R2
351
(c)
Notes
3. Tested initially and after any design or process changes that may affect these parameters.
4. AC characteristics (except High Z) are tested using the load conditions shown in Figure 1 (a). High Z characteristics are tested for all speeds using the test load
shown in Figure 1 (c).
Document Number: 38-05460 Rev. *H
Page 5 of 18


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Featured Datasheets

Part NumberDescriptionMFRS
CY7C1021DV33The function is 1-Mbit (64 K x 16) Static RAM. Cypress SemiconductorCypress Semiconductor

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