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PDF FM25L04B Data sheet ( Hoja de datos )
| Número de pieza | FM25L04B | |
| Descripción | 4-Kbit (512 x 8) Serial (SPI) F-RAM | |
| Fabricantes | Cypress Semiconductor | |
| Logotipo |  |
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FM25L04B
4-Kbit (512 × 8) Serial (SPI) F-RAM
4-Kbit (512 × 8) Serial (SPI) F-RAM
Features
■ 4-Kbit ferroelectric random access memory (F-RAM) logically
organized as 512 × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
❐ Up to 20 MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
❐ 200 A active current at 1 MHz
❐ 3 A (typ) standby current
■ Low-voltage operation: VDD = 2.7 V to 3.6 V
■ Industrial temperature: –40 C to +85 C
■ Packages
❐ 8-pin small outline integrated circuit (SOIC) package
❐ 8-pin thin dual flat no leads (DFN) package
■ Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Functional Description
The FM25L04B is a 4-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25L04B performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25L04B is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the FM25L04B ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25L04B provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25L04B uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an industrial temperature
range of –40 C to +85 C.
For a complete list of related documentation, click here.
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
Instruction Register
512 x 8
F-RAM Array
Address Register
Counter
9
8
SI SO
Data I/O Register
2
Nonvolatile Status
Register
Errata: The Write Enable Latch (WEL) bit in the Status Register of FM25L04B part doesn’t clear after executing the memory write (WRITE) operation at memory location(s)
from 0x100 to 0x1FF. For more information, see Errata on page 20. Details include errata trigger conditions, scope of impact, available workarounds, and silicon revision
applicability.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-86146 Rev. *I
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 27, 2017
1 page  
FM25L04B
master issues instructions to the slave through the SI pin, while
the slave responds through the SO pin. Multiple slave devices
may share the SI and SO lines as described earlier.
The FM25L04B has two separate pins for SI and SO, which can
be connected with the master as shown in Figure 3.
For a microcontroller that has no dedicated SPI bus, a
general-purpose port may be used. To reduce hardware
resources on the controller, it is possible to connect the two data
pins (SI, SO) together and tie off (HIGH) the HOLD and WP pins.
Figure 4 shows such a configuration, which uses only three pins.
Most Significant Bit (MSB)
The SPI protocol requires that the first bit to be transmitted is the
Most Significant Bit (MSB). This is valid for both address and
data transmission.
The 4-Kbit serial F-RAM requires an opcode including the upper
address bit, and a word address for any read or write operation.
The word address consist of the lower 8-address bits. The
complete address of 9 bits specifies each byte address uniquely.
Serial Opcode
After the slave device is selected with CS going LOW, the first
byte received is treated as the opcode for the intended operation.
FM25L04B uses the standard opcodes for memory accesses.
Invalid Opcode
If an invalid opcode is received, the opcode is ignored and the
device ignores any additional serial data on the SI pin until the
next falling edge of CS, and the SO pin remains tristated.
Status Register
FM25L04B has an 8-bit Status Register. The bits in the Status
Register are used to configure the device. These bits are
described in Table 3 on page 7.
Figure 3. System Configuration with SPI port
SCK
MOSI
MISO
SPI
Microcontroller
CS1
HOLD1
WP1
CS2
HOLD2
WP2
SCK SI SO
FM25L04B
CS HOLD WP
SCK SI SO
FM25L04B
CS HOLD WP
Figure 4. System Configuration without SPI port
P1.0
P1.1
Microcontroller
SCK SI SO
FM25L04B
CS HOLD WP
P1.2
SPI Modes
FM25L04B may be driven by a microcontroller with its SPI
peripheral running in either of the following two modes:
■ SPI Mode 0 (CPOL = 0, CPHA = 0)
■ SPI Mode 3 (CPOL = 1, CPHA = 1)
For both these modes, the input data is latched in on the rising
edge of SCK starting from the first rising edge after CS goes
active. If the clock starts from a HIGH state (in mode 3), the first
rising edge after the clock toggles is considered. The output data
is available on the falling edge of SCK.
Document Number: 001-86146 Rev. *I
Page 5 of 23
5 Page 
FM25L04B
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –55 C to +125 C
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on VDD relative to VSS .........–1.0 V to +5.0 V
Input voltage ............. –1.0 V to +5.0 V and VIN < VDD+1.0 V
DC voltage applied to outputs
in High Z state .................................... –0.5 V to VDD + 0.5 V
Transient voltage (< 20 ns)
on any pin to ground potential ............ –2.0 V to VDD + 2.0 V
DC Electrical Characteristics
Package power dissipation capability (TA = 25 °C) ..... 1.0 W
Surface mount lead
soldering temperature (3 seconds) .......................... +260 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Electrostatic Discharge Voltage
Human Body Model (AEC-Q100-002 Rev. E) ................... 2 kV
Charged Device Model (AEC-Q100-011 Rev. B) .............. 500 V
Latch up current ..................................................... > 140 mA
Operating Range
Range
Industrial
Ambient Temperature (TA)
VDD
–40 C to +85 C
2.7 V to 3.6 V
Over the Operating Range
Parameter
Description
Test Conditions
Min
VDD Power supply
IDD VDD supply current
SCK toggling between fSCK = 1 MHz
VDD – 0.3 V
other inputs
and
VSS,
fSCK = 20 MHz
VSS or VDD – 0.3 V.
SO = Open.
2.7
–
–
ISB
ILI
ILO
VIH
VIL
VOH
VOL
VHYS[4]
VDD standby current
Input leakage current
Output leakage current
Input HIGH voltage
Input LOW voltage
CS = VDD. All other inputs VSS or VDD.
–
VSS < VIN < VDD
–
VSS < VOUT < VDD
–
0.7 × VDD
– 0.3
Output HIGH voltage
IOH = –2 mA
Output LOW voltage
IOL = 2 mA
Input Hysteresis (CS and SCK pin)
VDD – 0.8
–
0.05 × VDD
Typ [3]
3.0
–
–
3
–
–
–
–
–
–
–
Max Unit
3.6 V
0.2 mA
3 mA
6
±1
±1
VDD + 0.3
0.3 × VDD
–
0.4
–
A
A
A
V
V
V
V
V
Notes
3. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested.
4. This parameter is characterized but not 100% tested.
Document Number: 001-86146 Rev. *I
Page 11 of 23
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet FM25L04B.PDF ] | |
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