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Número de pieza | CYDM064B16 | |
Descripción | 1.8 V 4 K/8 K/16 K x 16 MoBL Dual-Port Static RAM | |
Fabricantes | Cypress Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CYDM064B16 (archivo pdf) en la parte inferior de esta página. Total 27 Páginas | ||
No Preview Available ! CYDM064B16
CYDM128B16
CYDM256B16
1.8 V 4 K/8 K/16 K × 16
MoBL® Dual-Port Static RAM
1.8V 4K/8K/16K x 16 MoBL® Dual-Port Static RAM
Features
■ True dual ported memory cells that allow simultaneous access
of the same memory location
■ 4, 8, or 16K × 16 organization
■ Ultra Low operating power
❐ Active: ICC = 15 mA (typical) at 55 ns
❐ Standby: ISB3 = 2 A (typical)
■ Small footprint: available in a 6x6 mm 100-pin Pb-free vfBGA
■ Port independent 1.8V, 2.5V, and 3.0V I/Os
■ Full asynchronous operation
■ Automatic power down
■ Pin select for Master or Slave
■ Expandable data bus to 32-bits with Master or Slave chip select
when using more than one device
■ On-chip arbitration logic
■ Semaphores included to permit software handshaking
between ports
■ Input read registers and output drive registers
■ INT flag for port-to-port communication
■ Separate upper-byte and lower-byte control
■ Industrial temperature ranges
Selection Guide for VCC = 1.8V
Parameter
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
CYDM256B16, CYDM128B16, CYDM064B16
(-55)
1.8V -1.8V
55
15
2
2
Unit
V
ns
mA
A
A
Selection Guide for VCC = 2.5V
Parameter
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
CYDM256B16, CYDM128B16, CYDM064B16
(-55)
2.5V-2.5V
55
28
6
4
Unit
V
ns
mA
A
A
Selection Guide for VCC = 3.0V
Parameter
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
CYDM256B16, CYDM128B16, CYDM064B16
(-55)
3.0V-3.0V
55
42
7
6
Unit
V
ns
mA
A
A
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-00217 Rev. *I
• San Jose, CA 95134-1709 • 408-943-2600
Revised March 10, 2014
1 page CYDM064B16
CYDM128B16
CYDM256B16
Pin Definitions
100-ball 0.5 mm pitch BGA (CYDM064B16, CYDM128B16, CYDM256B16)
Left Port
Right Port
CEL
CER
R/WL
R/WR
OEL
A0L–A13L
IO0L–IO15L
OER
A0R–A13R
IO0R–IO15R
SEML
SEMR
UBL
UBR
LBL LBR
INTL
INTR
BUSYL
BUSYR
IRR0, IRR1
ODR0-ODR4
SFEN
M/S
VCC
GND
VDDIOL
VDDIOR
NC
Chip Enable
Description
Read or Write Enable
Output Enable
Address (A0–A11 for 4K devices; A0–A12 for 8K devices; A0–A13 for 16K devices)
Data Bus Input or Output for x16 devices
Semaphore Enable
Upper Byte Select (IO8–IO15)
Lower Byte Select (IO0–IO7)
Interrupt Flag
Busy Flag
Input Read Register for CYDM064B16 and CYDM128B16
A13L and A13R for CYDM256B16.
Output Drive Register. These outputs are Open Drain.
Special Function Enable
Master or Slave Select
Core Power
Ground
Left Port I/O Voltage
Right Port I/O Voltage
No Connect. Leave this pin Unconnected.
Document Number: 001-00217 Rev. *I
Page 5 of 27
5 Page CYDM064B16
CYDM128B16
CYDM256B16
Electrical Characteristics for VCC = 1.8V (continued)
Over the Operating Range
CYDM256B16, CYDM128B16, CYDM064B16
Parameter
ICC
ISB1
ISB2
ISB3
ISB4
Description
-55
P1 I/O Voltage P2 I/O Voltage Min
Operating Current (VCC = Max.,
IOUT = 0 mA) Outputs Disabled
Ind.
1.8V
1.8V
Standby Current (Both Ports TTL Ind.
Level) CEL and CER VCC – 0.2,
SEML = SEMR = VCC – 0.2, f = fMAX
1.8V
1.8V
Standby Current (One Port TTL
Level) CEL | CER VIH, f = fMAX
Ind.
1.8V
1.8V
Standby Current (Both Ports CMOS Ind.
Level) CEL and CER VCC 0.2V,
SEML and SEMR > VCC – 0.2V, f = 0
1.8V
1.8V
Standby Current (One Port CMOS Ind.
Level) CEL | CER VIH, f = fMAX[21]
1.8V
1.8V
Typ.
15
2
Max
25
6
8.5 14
26
8.5 14
Unit
mA
A
mA
A
mA
Electrical Characteristics for VCC = 2.5V
Over the Operating Range
Parameter
VOH
VOL
VOL ODR
VIH
VIL
IOZ
ICEX ODR
IIX
ICC
CYDM256B16, CYDM128B16, CYDM064B16
Description
-55
P1 I/O Voltage P2 I/O Voltage Min
Typ.
Max
Output HIGH Voltage (IOH = –2 mA)
2.5V (any port)
3.0V (any port)
2.0
2.1
Output LOW Voltage (IOL = 2 mA
2.5V (any port)
3.0V (any port)
0.4
0.4
ODR Output LOW Voltage (IOL = 8 mA
2.5V (any port)
3.0V (any port)
0.2
0.2
Input HIGH Voltage
Input LOW Voltage
2.5V (any port)
3.0V (any port)
2.5V (any port)
1.7
2.0
–0.3
VDDIO + 0.3
VDDIO + 0.2
0.6
3.0V (any port)
–0.2
0.7
Output Leakage Current
2.5V
2.5V
–1
1
3.0V
3.0V
–1
1
ODR Output Leakage Current.
VOUT = VCC
2.5V
3.0V
2.5V
3.0V
–1
–1
1
1
Input Leakage Current
2.5V
2.5V
–1
1
3.0V
3.0V
–1
1
Operating Current (VCC = Max.,
IOUT = 0 mA) Outputs Disabled
Ind.
2.5V
2.5V
28 40
Unit
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A
A
mA
Notes
21. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3.
Document Number: 001-00217 Rev. *I
Page 11 of 27
11 Page |
Páginas | Total 27 Páginas | |
PDF Descargar | [ Datasheet CYDM064B16.PDF ] |
Número de pieza | Descripción | Fabricantes |
CYDM064B16 | 1.8 V 4 K/8 K/16 K x 16 MoBL Dual-Port Static RAM | Cypress Semiconductor |
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