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PDF CY62148DV30 Data sheet ( Hoja de datos )

Número de pieza CY62148DV30
Descripción 4-Mbit (512 K x 8) MoBL Static RAM
Fabricantes Cypress Semiconductor 
Logotipo Cypress Semiconductor Logotipo



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CY62148DV30
4-Mbit (512 K × 8) MoBL® Static RAM
4-Mbit (512 K × 8) MoBL® Static RAM
Features
Temperature Ranges
Industrial: –40 °C to 85 °C
Very high speed: 55 ns
Wide voltage range: 2.20 V–3.60 V
Pin-compatible with CY62148CV25, CY62148CV30 and
CY62148CV33
Ultra low active power
Typical active current: 1.5 mA at f = 1 MHz
Typical active current: 8 mA at f = fmax (55-ns speed)
Ultra low standby power
Easy memory expansion with CE, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed/power
Available in Pb-free 32-pin Small-outline integrated circuit
(SOIC package)
Logic Block Diagram
Functional Description
The CY62148DV30 [1] is a high-performance CMOS static RAM
organized as 512K words by 8 bits. This device features
advanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life™ (MoBL) in portable
applications such as cellular telephones. The device also has an
automatic power-down feature that significantly reduces power
consumption. The device can be put into standby mode reducing
power consumption when deselected (CE HIGH).The eight input
and output pins (I/O0 through I/O7) are placed in a
high-impedance state when:
Deselected (CE HIGH)
Outputs are disabled (OE HIGH)
When the write operation is active(CE LOW and WE LOW)
Write to the device by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7)
is then written into the location specified on the address pins (A0
through A18).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins will appear on the I/O pins.
For a complete list of related documentation, click here.
AAAAAAAAAAAAA1112471035869210
CE
WE
Data in Drivers
512K x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
OE
Note
1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05341 Rev. *I
• San Jose, CA 95134-1709 • 408-943-2600
Page 1 of 15

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CY62148DV30 pdf
CY62148DV30
Capacitance
Parameter [7]
Description
CIN
COUT
Input capacitance
Output capacitance
Thermal Resistance
Parameter [7]
Description
JA Thermal resistance
(junction to ambient)
JC Thermal resistance
(junction to case)
Test Conditions
TA = 25 °C, f = 1 MHz, VCC = VCC(typ)
Max Unit
10 pF
10 pF
Test Conditions
Still air, soldered on a 3 x 4.5 inch, four-layer printed circuit
board
SOIC
55
22
Unit
C/W
C/W
AC Test Loads and Waveforms
VCC
OUTPUT
R1
50 pF
INCLUDING
JIG AND
SCOPE
Figure 2. AC Test Loads and Waveforms
ALL INPUT PULSES
VCC
10%
90%
90%
10%
R2 GND
Rise Time: 1 V/ns
Fall time: 1 V/ns
Equivalent to:
THÉVENIN EQUIVALENT
OUTPUT
RTH
VTH
Parameters
R1
R2
RTH
VTH
2.5 V (2.2 V – 2.7 V)
16667
15385
8000
1.20
3.0 V (2.7 V – 3.6 V)
1103
1554
645
1.75
Unit
V
Document Number: 38-05341 Rev. *I
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CY62148DV30 arduino
CY62148DV30
Truth Table
CE WE
HX
LH
LH
LL
OE Inputs/Outputs
X High Z
L Data out (I/O0-I/O7)
H High Z
X Data in (I/O0-I/O7)
Mode
Deselect/Power-down
Read
Output disabled
Write
Power
Standby (ISB)
Active (ICC)
Active (Icc)
Active (Icc)
Ordering Information
Speed
(ns)
Ordering Code
Package
Diagram
Package Type
55 CY62148DV30LL-55SXI
51-85081 32-pin SOIC (Pb-free)
Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
CY 621 4 8 D V30 LL - 55 S X I
Temperature Grade: I = Industrial
Pb-free
Package Type: S = 32 pin SOIC
Speed Grade: 55 ns
LL = Low Power
Voltage Range = 3 V typical
Process Technology: D = 130 nm
Bus Width: 8 = × 8
Density: 4 = 4-Mbit
Family Code: 621 = MoBL SRAM family
Company ID: CY = Cypress
Operating
Range
Industrial
Document Number: 38-05341 Rev. *I
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