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What is CY62177EV18?

This electronic component, produced by the manufacturer "Cypress Semiconductor", performs the same function as "32-Mbit (2 M x 16 / 4 M x 8) Static RAM".


CY62177EV18 Datasheet PDF - Cypress Semiconductor

Part Number CY62177EV18
Description 32-Mbit (2 M x 16 / 4 M x 8) Static RAM
Manufacturers Cypress Semiconductor 
Logo Cypress Semiconductor Logo 


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CY62177EV18 MoBL®
32-Mbit (2 M × 16 / 4 M × 8) Static RAM
32-Mbit (2 M × 16 / 4 M × 8) Static RAM
Features
Thin small outline package (TSOP) I configurable as 2 M × 16
or as 4 M × 8 static RAM (SRAM)
Very high speed
70 ns
Wide voltage range
1.65 V to 2.25 V
Ultra low standby power
Typical standby current: 3 A
Maximum standby current: 25 A
Ultra low active power
Typical active current: 4.5 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE Features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Available in Pb-free 48-ball TSOP I and 48-ball FBGA package
Functional Description
The CY62177EV18 is a high-performance CMOS static RAM
organized as 2 M words by 16 bits and 4 M words by 8 bits. This
device features advanced circuit design to provide ultra low
active current. It is ideal for providing More Battery Life
(MoBL®) in portable applications, such as cellular telephones.
The device also has an automatic power-down feature that
significantly reduces power consumption by 99 percent when
addresses are not toggling. The device can also be put into
standby mode when deselected (CE1 HIGH or CE2 LOW or both
BHE and BLE are HIGH). The input and output pins (I/O0 through
I/O15) are placed in a high impedance state when: deselected
(CE1HIGH or CE2 LOW), outputs are disabled (OE HIGH), both
Byte High Enable and Byte Low Enable are disabled (BHE, BLE
HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE
LOW).
To write to the device, take Chip Enables (CE1 LOW and CE2
HIGH) and Write Enable (WE) input LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0 through
A20). If Byte High Enable (BHE) is LOW, then data from I/O pins
(I/O8 through I/O15) is written to the location specified on the
address pins (A0 through A20). To read from the device, take
Chip Enables (CE1 LOW and CE2 HIGH) and Output Enable
(OE) LOW while forcing the Write Enable (WE) HIGH. If Byte
Low Enable (BLE) is LOW, then data from the memory location
specified by the address pins appear on I/O0 to I/O7. If Byte High
Enable (BHE) is LOW, then data from memory appears on I/O8
to I/O15. See the Truth Table on page 11 for a complete
description of read and write modes.
Pin #13 of the 48 TSOP I package is an DNU pin that must be
left floating at all times to ensure proper application.
For a complete list of related documentation, click here.
Logic Block Diagram
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DATA IN DRIVERS
2M × 16
RAM Array
I/O0–I/O7
I/O8–I/O15
COLUMN DECODER
Power-Down
Circuit
BHE
BLE
BYTE
BHE
WE
OE
BLE
CE2
CE1
CE2
CE1
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-76091 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised November 28, 2014

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CY62177EV18 equivalent
CY62177EV18 MoBL®
Capacitance
Parameter [11]
Description
CIN
COUT
Input capacitance
Output capacitance
Thermal Resistance
Parameter [11]
Description
JA Thermal resistance
(junction to ambient)
JC Thermal resistance
(junction to case)
Test Conditions
TA = 25 °C, f = 1 MHz, VCC = VCC(typ)
Max Unit
15 pF
15 pF
Test Conditions
Still air, soldered on a 3 × 4.5 inch, 2-layer
printed circuit board
FBGA
38.10
7.54
TSOPI
44.66
12.12
Unit
C/W
C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
VCC
OUTPUT
30 pF
R1
R2
VCC
GND
10%
Rise Time = 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
INCLUDING
JIG AND
SCOPE
Equivalent to: THEVENIN EQUIVALENT
OUTPUT
RTH
V
Table 1. AC Test Loads
Parameters
R1
R2
RTH
VTH
Value
13500
10800
6000
0.80
Unit
V
Note
11. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 001-76091 Rev. *C
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Featured Datasheets

Part NumberDescriptionMFRS
CY62177EV18The function is 32-Mbit (2 M x 16 / 4 M x 8) Static RAM. Cypress SemiconductorCypress Semiconductor

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