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PDF CY7C2644KV18 Data sheet ( Hoja de datos )
| Número de pieza | CY7C2644KV18 | |
| Descripción | 144-Mbit QDR II+ SRAM Two-Word Burst Architecture | |
| Fabricantes | Cypress Semiconductor | |
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CY7C2642KV18/CY7C2644KV18
144-Mbit QDR® II+ SRAM Two-Word
Burst Architecture (2.0 Cycle Read Latency) with ODT
144-Mbit QDR® II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) with ODT
Features
■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 333-MHz clock for high bandwidth
■ Two-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces on both read and write ports
(data transferred at 666 MHz) at 333 MHz
■ Available in 2.0-clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ On-die termination (ODT) feature
❐ Supported for D[x:0], BWS[x:0], and K/K inputs
■ Single multiplexed address input bus latches address inputs
for both read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ Quad data rate (QDR®) II+ operates with 2.0-cycle read latency
when DOFF is asserted high
■ Operates similar to QDR I device with one cycle read latency
when DOFF is asserted low
■ Available in × 18, and × 36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8 V± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]
❐ Supports both 1.5 V and 1.8 V I/O supply
■ High-speed transceiver logic (HSTL) inputs and variable drive
HSTL output buffers
■ Available in 165-ball fine pitch ball grid array (FBGA) package
(15 × 17 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
Selection Guide
Maximum operating frequency
Maximum operating current
Description
■ Phase Locked Loop (PLL) for accurate data placement
Configurations
With Read Cycle Latency of 2.0 cycles:
CY7C2642KV18 – 8 M × 18
CY7C2644KV18 – 4 M × 36
Functional Description
The CY7C2642KV18, and CY7C2644KV18 are 1.8-V
synchronous pipelined SRAMs, equipped with QDR® II+
architecture. Similar to QDR II architecture, QDR II+ architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR II+
architecture has separate data inputs and data outputs to
completely eliminate the need to “turn around” the data bus that
exists with common I/O devices. Access to each port is through
a common address bus. Addresses for read and write addresses
are latched on alternate rising edges of the input (K) clock.
Accesses to the QDR II+ read and write ports are completely
independent of one another. To maximize data throughput, both
read and write ports are equipped with DDR interfaces. Each
address location is associated with two 18-bit words
(CY7C2642KV18), or 36-bit words (CY7C2644KV18) that burst
sequentially into or out of the device. Because data can be
transferred into and out of the device on every rising edge of both
input clocks (K and K), memory bandwidth is maximized while
simplifying system design by eliminating bus “turn arounds”.
These devices have an ODT feature supported for D[x:0],
BWS[x:0], and K/K inputs, which helps eliminate external
termination resistors, reduce cost, reduce board area, and
simplify board routing.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
For a complete list of related documentation, click here.
333 MHz 300 MHz Unit
333 300 MHz
× 18 970 Not Offered mA
× 36 1160
1080
Note
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support VDDQ = 1.4 V to VDD.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-44138 Rev. *P
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 31, 2015
1 page  
CY7C2642KV18/CY7C2644KV18
Pin Definitions
Pin Name
I/O
Pin Description
D[x:0]
WPS
BWS0,
BWS1,
BWS2,
BWS3
Input- Data input signals. Sampled on the rising edge of K and K clocks during valid write operations.
Synchronous CY7C2642KV18 D[17:0]
CY7C2644KV18 D[35:0]
Input- Write port select Active low. Sampled on the rising edge of the K clock. When asserted active, a
Synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0].
Input- Byte write select 0, 1, 2, and 3 Active low. Sampled on the rising edge of the K and K clocks during
Synchronous write operations. Used to select which byte is written into the device during the current portion of the
write operations. Bytes not written remain unaltered.
CY7C2642KV18 BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C2644KV18 BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3
controls D[35:27].
All the byte write selects are sampled on the same edge as the data. Deselecting a byte write select
ignores the corresponding byte of data and it is not written into the device.
A Input- Address inputs. Sampled on the rising edge of the K (read address) and K (write address) clocks during
Synchronous active read and write operations. These address inputs are multiplexed for both read and write
operations. Internally, the device is organized as 8 M × 18 (2 arrays each of 4 M × 18) for CY7C2642KV18,
and 4 M × 36 (2 arrays each of 2 M × 36) for CY7C2644KV18. Therefore, only 22 address inputs for
CY7C2642KV18, and 21 address inputs for CY7C2644KV18. These inputs are ignored when the
appropriate port is deselected.
Q[x:0]
RPS
Output- Data output signals. These pins drive out the requested data during a read operation. Valid data is
Synchronous driven out on the rising edge of the K and K clocks during read operations. When the read port is
deselected, Q[x:0] are automatically tri-stated.
CY7C2642KV18 Q[17:0]
CY7C2644KV18 Q[35:0]
Input- Read port select Active low. Sampled on the rising edge of positive input clock (K). When active, a
Synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access
is allowed to complete and the output drivers are automatically tri-stated following the next rising edge
of the K clock. Each read access consists of a burst of two sequential transfers.
QVLD
ODT [3]
Valid output Valid output indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ.
indicator
On-die
termination
input pin
On-die termination input. This pin is used for On-Die termination of the input signals. ODT range
selection is made during power up initialization. A low on this pin selects a low range that follows RQ/3.33
for 175 < RQ < 350 (where RQ is the resistor tied to ZQ pin)A high on this pin selects a high range
that follows RQ/1.66 for 175 < RQ < 250 (where RQ is the resistor tied to ZQ pin). When left floating,
a high range termination value is selected by default.
Note
3. On-Die Termination (ODT) feature is supported for D[x:0], BWS[x:0], and K/K inputs.
Document Number: 001-44138 Rev. *P
Page 5 of 30
5 Page 
CY7C2642KV18/CY7C2644KV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8 V I/O logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied low
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternatively be connected to VDD through a pull up resistor. TDO
must be left unconnected. Upon power up, the device comes up
in a reset state, which does not interfere with the operation of the
device.
Test Access Port
Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the TAP Controller State
Diagram on page 13. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 17).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS high (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a High Z state.
TAP Registers
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 14. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set low (VSS) when the
BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.
The Boundary Scan Order on page 18 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 17.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 17. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Document Number: 001-44138 Rev. *P
Page 11 of 30
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet CY7C2644KV18.PDF ] | |
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