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What is CY7C1312KV18?

This electronic component, produced by the manufacturer "Cypress Semiconductor", performs the same function as "18-Mbit QDR II SRAM Two-Word Burst Architecture".


CY7C1312KV18 Datasheet PDF - Cypress Semiconductor

Part Number CY7C1312KV18
Description 18-Mbit QDR II SRAM Two-Word Burst Architecture
Manufacturers Cypress Semiconductor 
Logo Cypress Semiconductor Logo 


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CY7C1312KV18/CY7C1314KV18
18-Mbit QDR® II SRAM
Two-Word Burst Architecture
18-Mbit QDR® II SRAM Two-Word Burst Architecture
Features
Separate independent read and write data ports
Supports concurrent transactions
333 MHz clock for high bandwidth
Two-word burst on all accesses
Double-data rate (DDR) interfaces on both read and write ports
(data transferred at 666 MHz) at 333 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Single multiplexed address input bus latches address inputs
for both read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
QDR® II operates with 1.5 cycle read latency when DOFF is
asserted HIGH
Operates similar to QDR I device with one cycle read latency
when DOFF is asserted LOW
Available in × 18, and × 36 configurations
Full data coherency, providing most current data
Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD
Supports both 1.5 V and 1.8 V I/O supply
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive HSTL output buffers
JTAG 1149.1 compatible test access port
PLL for accurate data placement
Configurations
CY7C1312KV18 – 1M × 18
CY7C1314KV18 – 512K × 36
Functional Description
The CY7C1312KV18, and CY7C1314KV18 are 1.8 V
Synchronous Pipelined SRAMs, equipped with QDR II
architecture. QDR II architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II architecture has separate data inputs and
data outputs to completely eliminate the need to ‘turnaround’ the
data bus that exists with common I/O devices. Access to each
port is through a common address bus. Addresses for read and
write addresses are latched on alternate rising edges of the input
(K) clock. Accesses to the QDR II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with two 18-bit
words (CY7C1312KV18), or 36-bit words (CY7C1314KV18) that
burst sequentially into or out of the device. Because data can be
transferred into and out of the device on every rising edge of both
input clocks (K and K and C and C), memory bandwidth is
maximized while simplifying system design by eliminating bus
turnarounds.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
For a complete list of related documentation, click here.
Selection Guide
Maximum operating frequency
Maximum operating current
Description
× 18
× 36
333 MHz
333
690
840
300 MHz
300
640
780
250 MHz
250
560
670
Unit
MHz
mA
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-58903 Rev. *J
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 20, 2016

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CY7C1312KV18 equivalent
CY7C1312KV18/CY7C1314KV18
Pin Definitions
Pin Name
D[x:0]
WPS
BWS0,
BWS1,
BWS2,
BWS3
A
Q[x:0]
RPS
C
C
K
K
CQ
CQ
ZQ
I/O Pin Description
Input- Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations.
synchronous CY7C1312KV18 D[17:0]
CY7C1314KV18 D[35:0]
Input- Write Port Select Active LOW. Sampled on the rising edge of the K clock. When asserted active, a
synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0].
Input- Byte Write Select 0, 1, 2, and 3 Active LOW. Sampled on the rising edge of the K and K clocks during
synchronous write operations. Used to select which byte is written into the device during the current portion of the
write operations. Bytes not written remain unaltered.
CY7C1312KV18 BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1314KV18  BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3
controls D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.
Input- Address Inputs. Sampled on the rising edge of the K (read address) and K (write address) clocks during
synchronous active read and write operations. These address inputs are multiplexed for both read and write
operations. Internally, the device is organized as 1M × 18 (2 arrays each of 512K × 18) for
CY7C1312KV18, and 512K × 36 (2 arrays each of 256K × 36) for CY7C1314KV18. Therefore, only 19
address inputs are needed to access the entire memory array of CY7C1312KV18, and 18 address inputs
for CY7C1314KV18. These inputs are ignored when the appropriate port is deselected.
Output- Data Output Signals. These pins drive out the requested data during a read operation. Valid data is
synchronous driven out on the rising edge of the C and C clocks during read operations, or K and K when in single
clock mode. When the read port is deselected, Q[x:0] are automatically tristated.
CY7C1312KV18 Q[17:0]
CY7C1314KV18 Q[35:0]
Input- Read Port Select Active LOW. Sampled on the rising edge of positive input clock (K). When active,
synchronous a read operation is initiated. Deasserting deselects the read port. When deselected, the pending access
is allowed to complete and the output drivers are automatically tristated following the next rising edge of
the C clock. Each read access consists of a burst of two sequential transfers.
Input clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. Use C and C together to deskew the flight times of various devices on the board back to the
controller. See Application Example on page 8 for further details.
Input clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. Use C and C together to deskew the flight times of various devices on the board back to the
controller. See Application Example on page 8 for further details.
Input clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising
edge of K.
Input clock
Echo clock
Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device
and to drive out data through Q[x:0] when in single clock mode.
CQ Referenced with respect to C. This is a free running clock and is synchronized to the input clock
for output data (C) of the QDR II. In single clock mode, CQ is generated with respect to K. The timing
for the echo clocks is shown in Switching Characteristics on page 23.
Echo clock CQ Referenced with respect to C. This is a free running clock and is synchronized to the input clock
for output data (C) of the QDR II. In single clock mode, CQ is generated with respect to K. The timing
for the echo clocks is shown in the Switching Characteristics on page 23.
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, connect this pin directly to VDDQ, which enables the
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
Document Number: 001-58903 Rev. *J
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Featured Datasheets

Part NumberDescriptionMFRS
CY7C1312KV18The function is 18-Mbit QDR II SRAM Two-Word Burst Architecture. Cypress SemiconductorCypress Semiconductor

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