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What is CY7C1564XV18?

This electronic component, produced by the manufacturer "Cypress Semiconductor", performs the same function as "72-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture".


CY7C1564XV18 Datasheet PDF - Cypress Semiconductor

Part Number CY7C1564XV18
Description 72-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture
Manufacturers Cypress Semiconductor 
Logo Cypress Semiconductor Logo 


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CY7C1562XV18/CY7C1564XV18
72-Mbit QDR® II+ Xtreme SRAM Two-Word
Burst Architecture (2.5 Cycle Read Latency)
72-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
Features
Separate independent read and write data ports
Supports concurrent transactions
450 MHz clock for high bandwidth
Two-word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 900 MHz) at 450 MHz
Available in 2.5 clock cycle latency
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
Data valid pin (QVLD) to indicate valid data on the output
Single multiplexed address input bus latches address inputs
for both read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
QDR™-II+ Xtreme operates with 2.5 cycle read latency when
DOFF is asserted HIGH
Operates similar to QDR-I device with 1 cycle read latency
when DOFF is asserted LOW
Available in × 18, and × 36 configurations
Full data coherency, providing most current data
Core VDD = 1.8 V± 0.1 V; I/Os VDDQ = 1.4 V to 1.6 V
Supports 1.5 V I/O supply
HSTL inputs and variable drive HSTL output buffers
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1 compatible test access port
Phase-Locked Loop (PLL) for accurate data placement
Configurations
With Read Cycle Latency of 2.5 cycles:
CY7C1562XV18 – 4M × 18
CY7C1564XV18 – 2M × 36
Functional Description
The CY7C1562XV18, and CY7C1564XV18 are 1.8 V
Synchronous Pipelined SRAMs, equipped with QDR® II+
architecture. Similar to QDR II architecture, QDR II+ architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR II+
architecture has separate data inputs and data outputs to
completely eliminate the need to “turnaround” the data bus that
exists with common I/Os devices. Access to each port is through
a common address bus. Addresses for read and write addresses
are latched on alternate rising edges of the input (K) clock.
Accesses to the QDR II+ Xtreme read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with two 18-bit
words (CY7C1562XV18), or 36-bit words (CY7C1564XV18) that
burst sequentially into or out of the device. Because data can be
transferred into and out of the device on every rising edge of both
input clocks (K and K), memory bandwidth is maximized while
simplifying system design by eliminating bus “turnarounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
For a complete list of related documentation, click here.
Selection Guide
Maximum Operating Frequency
Maximum Operating Current
Description
450 MHz 366 MHz Unit
450 366 MHz
× 18 1205
970 mA
× 36 1445
1165
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-68998 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised July 7, 2016

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CY7C1564XV18 equivalent
CY7C1562XV18/CY7C1564XV18
Pin Definitions
Pin Name
I/Os
Pin Description
D[x:0]
WPS
BWS0,
BWS1,
BWS2,
BWS3
Input- Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations.
Synchronous CY7C1562XV18 D[17:0]
CY7C1564XV18 D[35:0]
Input- Write Port Select Active LOW. Sampled on the rising edge of the K clock. When asserted active, a
Synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0].
Input- Byte Write Select 0, 1, 2 and 3 Active LOW. Sampled on the rising edge of the K and K clocks during
Synchronous write operations. Used to select which byte is written into the device during the current portion of the write
operations. Bytes not written remain unaltered.
CY7C1562XV18 BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1564XV18 BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls
D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.
A Input- Address Inputs. Sampled on the rising edge of the K (read address) and K (write address) clocks during
Synchronous active read and write operations. These address inputs are multiplexed for both read and write operations.
Internally, the device is organized as 4M × 18 (2 arrays each of 2M × 18) for CY7C1562XV18, and 2M × 36
(2 arrays each of 1M × 36) for CY7C1564XV18. Therefore, only 21 address inputs for CY7C1562XV18,
and 20 address inputs for CY7C1564XV18. These inputs are ignored when the appropriate port is
deselected. The address pins (A) can be assigned any bit order.
Q[x:0]
RPS
Output- Data Output Signals. These pins drive out the requested data during a read operation. Valid data is driven
Synchronous out on the rising edge of the K and K clocks during read operations. When the read port is deselected,
Q[x:0] are automatically tristated.
CY7C1562XV18 Q[17:0]
CY7C1564XV18 Q[35:0]
Input- Read Port Select Active LOW. Sampled on the rising edge of positive input clock (K). When active, a
Synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is
allowed to complete and the output drivers are automatically tristated following the next rising edge of the
K clock. Each read access consists of a burst of two sequential transfers.
QVLD
Valid output Valid Output Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ.
indicator
K Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and
to drive out data through Q[x:0]. All accesses are initiated on the rising edge of K.
K Input Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q[x:0].
CQ Echo Clock Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock
(K) of the QDR II+ Xtreme. The timing for the echo clocks is shown in Switching Characteristics on page 23.
CQ Echo Clock Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock
(K) of the QDR II+ Xtreme. The timing for the echo clocks is shown in Switching Characteristics on page 23.
ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus
impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor connected
between ZQ and ground. Alternatively, connect this pin directly to VDDQ, which enables the minimum
impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
PLL Turn Off Active LOW. Connecting this pin to ground turns off the PLL inside the device. The timing
in the operation with the PLL turned off differs from those listed in this data sheet. For normal operation,
connect this pin to a pull up through a 10 Kor less pull up resistor. The device behaves in QDR-I mode
when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz with
QDR-I timing.
TDO
Output TDO Pin for JTAG
TCK
Input TCK Pin for JTAG
Document Number: 001-68998 Rev. *F
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Featured Datasheets

Part NumberDescriptionMFRS
CY7C1564XV18The function is 72-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture. Cypress SemiconductorCypress Semiconductor

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