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Número de pieza | HMC7149 | |
Descripción | 10 WATT GaN MMIC POWER AMPLIFIER | |
Fabricantes | Analog Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HMC7149 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! HMC7149
v
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Typical Applications
The HMC7149 is ideal for:
• Test Instrumentation
• General Communications
• Radar
Functional Diagram
Features
High Psat: +40 dBm
Power Gain at Psat: +10 dB
High Output IP3: +39.5 dBm
Small Signal Gain: 20 dB
Supply Voltage: +28 V @ 680 mA
50 Ohm Matched Input/Output
Die Size: 3.4 x 4.5 x 0.1 mm
General Description
The HMC7149 is an 10W Gallium Nitride (GaN) MMIC
Power Amplifier which operates between 6 and 18
GHz. The amplifier typically provides 20dB of small
signal gain, +40 dBm of saturated output power, and
+39.5 dBm output IP3 at +28 dBm output power per
tone. The HMC7149 draws 680 mA current from
a +28V DC supply. The RF I/Os are matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All electrical performance data was aquired
with the die eutectically attached to 1.02 mm (40 mil)
thick CuMo carrier with multiple 1.0 mil diameter ball
bonds connecting the die to 50 Ohm transmission
lines on alumina.
Electrical Specifications, Tc = +25°C, Vdd= Vdd1 =Vdd2 = +28 V, Idd = 680 mA [1]
Parameter
Frequency Range
Small Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 4 dB Compression
(P4dB)
Power Gain for 4 dB compression
(P4dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3) [2]
Power Added Efficiency
Supply Current (Idd @ Vdd = 28V)
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
6 - 10
10 - 14
14 - 16
16 - 18
GHz
19 21
18 20
17 19
18 20
dB
±0.5
±0.6
±0.5
±0.7
dB
0.023
0.02
0.02
0.018
dB/ °C
17 17 16 11 dB
17 17 18 12 dB
35 35 35 36 dBm
17
40
39.5
22
680
16 15 17 dB
40 40 40 dBm
39
39.5
40.5
dBm
20 20 20 %
680 680 680 mA
[1] Adjust Vgg between -3V and 0V to achieve Idd= 680 mA typical.
[2] Measurement taken at 28V @ 680 mA, Pout/tone = +28 dBm.
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1 page HMC7149
v
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Output IM3 @ Vdd= +32V
50
40
30
20
10
20
22 24 26 28
Pout/TONE (dBm)
6 GHz
8 GHz
10 GHz
12 GHz
14 GHz
16 GHz
30 32
18 GHz
Power Compression @ 12 GHz
50 2250
45 2025
40 1800
35 1575
30 1350
25 1125
20 900
15 675
10 450
5 225
00
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
INPUT POWER (dBm)
Pout
Gain
PAE
Idd
Gain and Power vs.
Supply Voltage @ 12 GHz
45
40
35
30
25
20
15
24
26 28 30
Vdd (V)
32
P4dB(dBm)
Psat(dBm)
Gain(dB)
Power Compression @ 6 GHz
50 2250
45 2025
40 1800
35 1575
30 1350
25 1125
20 900
15 675
10 450
5 225
00
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
INPUT POWER (dBm)
Pout
Gain
PAE
Idd
Power Compression @ 18 GHz
50 2250
45 2025
40 1800
35 1575
30 1350
25 1125
20 900
15 675
10 450
5 225
00
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
INPUT POWER (dBm)
Pout
Gain
PAE
Idd
Gain and Power vs.
Supply Curent @ 12 GHz
45
40
35
30
25
20
15
340
510
680
850
1020
1190
1360
Idd (mA)
P4dB(dBm)
Psat(dBm)
Gain(dB)
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5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HMC7149.PDF ] |
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