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PDF 1N4148S Data sheet ( Hoja de datos )
| Número de pieza | 1N4148S | |
| Descripción | HIGH SPEED SWITCHING DIODE | |
| Fabricantes | EIC | |
| Logotipo |  |
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1N4148S
PRV : 100 Volts
Io : 150 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* High reliability
* Low reverse current
* Low forward voltage drop
* High speed switching
* Pb / RoHS Free
MECHANICAL DATA :
Case: DO-34 Glass Case
Weight: approx. 0.093g
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
HIGH SPEED SWITCHING DIODE
DO - 34 Glass
0.078 (2.0 )max.
Cathode
Mark
0.017 (0.43)max.
1.00 (25.4)
min.
0.118 (3.0)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Surge Forward Current at t < 1s and Tj = 25°C
Maximum Power Dissipation , Ta = 25 °C
Maximum Forward Voltage at IF = 10 mA
Maximum Reverse Current
at VR = 20V
at VR = 75V
at VR = 20V, Tj = 150°C
Maximum Voltage Rise when switching ON
test with 50mA Pulses
tp = 0.1μs, Rise Time <30ns fp = 5 to 100kHz
Maximum Reverse Recovery Time
from IF = 10mA to IR = 1mA , VR = 6V , RL = 100Ω
Thermal Resistance Junction to Ambient Air
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VR
IF(AV)
IFSM
PD
VF
IR
Vfr
Trr
RθJA
TJ
TSTG
VALUE
100
75
150 1)
500
500
1.0
25
5
50
2.5
4
350 1)
175
- 65 to + 175
Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
UNIT
V
V
mA
mA
mW
V
nA
μA
μA
V
ns
K/W
°C
°C
Page 1 of 2
Rev. 03 : December 3, 2008
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N4148S.PDF ] | |
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