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Datasheet UML2N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | UML2N | Isolated transistor and diodes Isolated transistor and diodes
Features z The 2SC2412K and a diodes are housed independently In a package MARKING：L2
UML2N
SOT-353 1
TR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO
VCEO VEBO
IC PC TJ Tstg
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base |  JinYu | transistor |
| 2 | UML2N | ISOLATED TRANSISTOR AND DIODES MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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UML2N
Features
• 2SC5585 and RB521S-30 are housed independently
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. S |  MCC | transistor |
| 3 | UML2N | Isolated Transistor and Diode JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encapsulate Transistors
UML2N Isolated Transistor and Diode
Features z The 2SC2412K and a diodes are housed independently In a package
MARKING：L2
SOT-353
TR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO
VC |  JCET | transistor |
| 4 | UML2N | Low-frequency transistor (isolated transistor and diode) Transistors
UML2N
(SPEC-UML2N)
594
|  ROHM Semiconductor | transistor |
UML Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | UML1 | NPN SILICON RF POWER TRANSISTOR UML1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UML1 is Designed for
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES:
• • • Omnigold™ Metalization System
B
D
C J
E
I
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
F G H K DIM A B C D E F G H I J .175 / 4.45 .275 / 6.99  Advanced Semiconductor transistor | | |
| 2 | UML10 | NPN SILICON RF POWER TRANSISTOR UML10
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The UML10 is Designed for
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES:
• • • Omnigold™ Metalization System
B
D
C J
E
I
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
F G H K DIM A B C D E F G H I J .175 / 4.45 .275 / 6.99 K Advanced Semiconductor transistor | | |
| 3 | UML100 | NPN SILICON RF POWER TRANSISTOR UML100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The UML100 is Designed for High Power Class C Amplifiers in 225 to 400 MHz Military Communication Equipment.
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R D
FEATURES:
• PG = 7.5 dB Typical at 400 MHz • Internal Input Matching Network • Omnig Advanced Semiconductor transistor | | |
| 4 | UML11N | General purpose transistor
EML11 / UML11N
Transistors
General purpose transistor (isolated transistor and diode)
EML11 / UML11N
2SA1774 and a RB521S-30 are housed independently in a EMT5 or UMT5 package.
zApplications DC / DC converter Motor driver
zExternal dimensions (Unit : mm)
EMT5
1.6
0.5
1pin m ROHM Semiconductor transistor | | |
| 5 | UML12N | General purpose transistor
EML12 / UML12N
Transistors
General purpose transistor (isolated transistor and diode)
EML12 / UML12N
2SC4617and RB521S-30 are housed independently in a EMT5 or UMT5 package.
zApplications DC / DC converter Motor driver
zExternal dimensions (Unit : mm)
EMT5
1.6
0.5
1pin mark ROHM Semiconductor transistor | | |
| 6 | UML15 | NPN SILICON RF POWER TRANSISTOR UML15
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UML15 is Designed for
45°
PACKAGE STYLE .280 4L STUD
A
FEATURES:
• • • Omnigold™ Metalization System
B C J E I
D
MAXIMUM RATINGS
IC VCBO VCES VEBO PDISS TJ TSTG θ JC 1.59 A 65 V 65 V 3.5 V 31.8 W @ TC = 25 OC -65 OC to +200 OC Advanced Semiconductor transistor | | |
| 7 | UML1N | Low-frequency transistor Transistors
UML1N
(SPEC-UML1N)
593
ROHM Semiconductor transistor | |
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