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PDF 7NM50 Data sheet ( Hoja de datos )
| Número de pieza | 7NM50 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
7NM50
Preliminary
7.0A, 500V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 7NM50 is a Super Junction MOSFET Structure
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a
high rugged avalanche characteristics. This power MOSFET is
usually used at DC-DC, AC-DC converters for power
applications.
FEATURES
* RDS(ON) < 0.55Ω @ VGS=10V, ID=3.5A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7NM50L-TF1-T
7NM50G-TF1-T
7NM50L-TN3-R
7NM50G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 6
QW-R205-161.b
1 page  
7NM50
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
3mA
12V
200nF
50kΩ
VGS
300nF
Same Type
as DUT
DUT
Gate Charge Test Circuit
VGS
10V
VDS
QGS
QG
QGD
Charge
Gate Charge Waveforms
Resistive Switching Test Circuit
10V
tP
VDS
RG ID
L
DUT
VDD
Unclamped Inductive Switching Test Circuit
Resistive Switching Waveforms
BVDSS
IAS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS-VDD
ID(t)
VDS(t)
tP Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R205-161.b
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 7NM50.PDF ] | |
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