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What is 18NM60N?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


18NM60N Datasheet PDF - STMicroelectronics

Part Number 18NM60N
Description N-channel Power MOSFET
Manufacturers STMicroelectronics　
Logo STMicroelectronics Logo　


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STB18NM60N, STF18NM60N, STI18NM60N
STP18NM60N, STW18NM60N
N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET
in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
Features
Order codes
VDSS
(@Tjmax)
RDS(on)
max.
ID
PW
STB18NM60N
STF18NM60N
STI18NM60N
STP18NM60N
STW18NM60N
650 V
110 W
30 W
< 0.285 Ω 13 A
110 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
3
2
1
TO-220
123
I²PAK
3
1
D²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STB18NM60N
STF18NM60N
STI18NM60N
STP18NM60N
STW18NM60N
Marking
18NM60N
18NM60N
18NM60N
18NM60N
18NM60N
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
!-V
Packaging
Tape and reel
Tube
Tube
Tube
Tube
October 2010
Doc ID 15868 Rev 3
1/18
www.st.com
18

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18NM60N equivalent
STB/F/I/P/W18NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 13 A, VGS=0
13 A
-
52 A
- 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =13 A, di/dt =100 A/µs,
300
VDD = 60 V
- 4.0
(see Figure 19)
25
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 60 V
360
di/dt =100 A/µs, ISD = 13 A - 4.5
Tj = 150°C (see Figure 19)
25
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15868 Rev 3
5/18


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 18NM60N electronic component.


Information Total 18 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
18NM60The function is N-CHANNEL POWER MOSFET. Unisonic TechnologiesUnisonic Technologies
18NM60NThe function is N-channel Power MOSFET. STMicroelectronicsSTMicroelectronics

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