(PDF) UTC4N65 Datasheet - N-CHANNEL POWER MOSFET

Número de pieza	UTC4N65
Descripción	N-CHANNEL POWER MOSFET
Fabricantes	Unisonic Technologies
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Hay una vista previa y un enlace de descarga de UTC4N65 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas
No Preview Available ! UNISONIC TECHNOLOGIES CO., LTD 4N65 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-397.N 1 page 4N65  TEST CIRCUITS AND WAVEFORMS Power MOSFET VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-397.N 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet UTC4N65.PDF ]

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PDF UTC4N65 Data sheet ( Hoja de datos )