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PDF FGA25N120ANTD_F109 Data sheet ( Hoja de datos )
| Número de pieza | FGA25N120ANTD_F109 | |
| Descripción | 25A NPT Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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April 2013
FGA25N120ANTD/FGA25N120ANTD_F109
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25C
• Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25C
• Extremely Enhanced Avalanche Capability
Applications
• Induction Heating, Microwave Oven
Description
Using Fairchild®'s proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device is well suited for the reso-
nant or soft switching application such as induction heating,
microwave oven.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
FGA25N120ANTD
1200
20
50
25
90
25
150
312
125
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.4
2.0
40
Unit
V
V
A
A
A
A
A
W
W
C
C
C
Unit
C/W
C/W
C/W
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
5000
4500 Ciss
4000
3500
3000
2500
2000
1500
1000
500
Coss
0 Crss
1
Common Emitter
VGE = 0V, f = 1MHz
TC = 25C
10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
100
tr
td(on)
10
0
10
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25C
TC = 125C
20 30 40 50 60 70
Gate Resistance, RG []
Figure 10. Switching Loss vs. Gate Resistance
1000
td(off)
100
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25C
TC = 125C
10
0 10 20 30 40 50
Gate Resistance, RG []
tf
60 70
Figure 11. Turn-On Characteristics vs.
Collector Current
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
10 TC = 25C
TC = 125C
Eon
Eoff
1
0 10 20 30 40 50 60 70
Gate Resistance, RG []
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
VGE = 15V, RG = 10
TC = 25C
TC = 125C
100
tr
td(on)
10 20 30 40 50
Collector Current, IC [A]
td(off)
100 tf
Common Emitter
VGE = 15V, RG = 10
TC = 25C
TC = 125C
10 20 30 40
Collector Current, IC [A]
50
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA25N120ANTD_F109.PDF ] | |
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