|
|
Datasheet PK510BA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PK510BA | N-Channel Enhancement Mode MOSFET PK510BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.3mΩ @VGS = 10V
ID2 86A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous |  UNIKC | mosfet |
PK5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PK501BA | P-Channel Enhancement Mode MOSFET PK501BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7mΩ @VGS = -10V
ID -43A
PDFN 5x6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS -30 VGS ±25 UNIKC mosfet | | |
| 2 | PK502BA | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode
PK502BA
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10.5mΩ
ID2 41A
D
G S
D D DD
#1 S S S G
G. GATE D. DRAIN S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST  NIKO-SEM transistor | | |
| 3 | PK504BA | N-Channel Field Effect Transistor NIKO-SEM
N-ChFanienldelEEfnfehcatnTcreamnseinsttoMrodeHalogen-FrePe &KPDL5eF0aNd4-5BFxr6eAPe
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ
ID 43A
D
G S
D D DD
#1 S S S G
G. GATE D. DRAIN S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBO NIKO-SEM transistor | | |
| 4 | PK506BA | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode Field
PK506BA
Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5mΩ
ID 64A
D
D D DD
G S
#1 S S S G
G. GATE D. DRAIN S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CON NIKO-SEM transistor | | |
| 5 | PK510BA | N-Channel Enhancement Mode MOSFET PK510BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.3mΩ @VGS = 10V
ID2 86A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous UNIKC mosfet | | |
| 6 | PK512BA | N-Channel Enhancement Mode MOSFET PK512BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.8mΩ @VGS = 10V
ID2 93A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous UNIKC mosfet | | |
| 7 | PK516BA | N-Channel Enhancement Mode MOSFET PK516BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7mΩ @VGS = 10V
ID 51A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Dr UNIKC mosfet | |
| Esta página es del resultado de búsqueda del PK510BA. Si pulsa el resultado de búsqueda de PK510BA se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |