P2610BT Datasheet PDF - NIKO-SEM
Part Number | P2610BT | |
Description | N-Channel Field Effect Transistor | |
Manufacturers | NIKO-SEM | |
Logo | ||
There is a preview and P2610BT download ( pdf file ) link at the bottom of this page. Total 4 Pages |
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N-Channel Enhancement Mode
P2610BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26.8mΩ
ID
36A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 0.1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
100
±20
36
23
70
11
6
83
33
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
1.5
UNITS
°C /W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 ° C
VGS = 4.5V, ID = 10A
VGS =10V, ID = 10A
100
1.3
1.8 2.3
±100
1
10
23 35
22 26.8
V
nA
A
mΩ
REV 1.0
1
D-47-1
|
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P2610BT electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ P2610BT.PDF Datasheet ] |
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