P3506DTF Datasheet PDF - NIKO-SEM
| Part Number | P3506DTF | |
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Manufacturers | NIKO-SEM | |
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NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
35mΩ
ID
-20A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
Tc = 25 °C
Tc = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-60
±25
-20
-10
-100
-38
72
26
10.4
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
4.8
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±25V
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V, TJ = 55 °C
VGS = -7V, ID = -20A
VGS = -10V, ID = -20A
VDS = -5V, ID = -20A
LIMITS
UNIT
MIN TYP MAX
-60
-2 -2.7 -4
V
±100 nA
1
µA
10
34 55
mΩ
29 35
32 S
REV 0.92
Jul-29-2011
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P3506DTF electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ P3506DTF.PDF Datasheet ] | |
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