UTC2N3904 Datasheet PDF - Unisonic Technologies
Part Number | UTC2N3904 | |
Description | NPN EPITAXIAL SILICON TRANSISTOR | |
Manufacturers | Unisonic Technologies | |
Logo | ||
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NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE APPLIATION
FEATURES
*Collector-Emitter Voltage: VCEO=40V
*Collector Dissipation: Pc(max)=625mW
*Complementary to 2N3906
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCEO
40
Emitter-base voltage
VEBO
6
Collector current
Ic 200
Collector dissipation
Pc 625
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Collector Cut-off Current
ICEX
VCE=30V, VEB=3V
50
Base Cut-off Current
IBL VCE=30V, VEB=3V
50
Collector-base breakdown voltage
VCBO
Ic=10µA,IE=0
60
Collector-emitter breakdown voltage VCEO
Ic=1mA,IB=0
40
(note)
Emitter-base breakdown voltage
VEBO
IE=10µA, Ic=0
6
DC current gain (note)
hFE1
VCE=1V,Ic=0.1mA
40
hFE2
VCE=1V,Ic=1mA
70
hFE3
hFE4
VCE=1V,Ic=10mA
VCE=1V,Ic=50mA
100
60
300
hFE5
VCE=1V,Ic=100mA
30
Collector-emitter saturation voltage VCE(sat)1
(note)
VCE(sat)2
Ic=10mA,IB=1mA
Ic=50mA,IB=5mA
0.2
0.3
Base-emitter saturation voltage VBE(sat)1
Ic=10mA,IB=1mA
0.65
0.85
(note)
VBE(sat)2
Ic=50mA,IB=5mA
0.95
Current gain bandwidth product
fT VCE=20V, Ic=10mA, f=100MHz 300
Output Capacitance
Cob VCB=5V,IE=0, f=1MHz
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
UNIT
nA
nA
V
V
V
V
V
MHz
pF
1
QW-R201-027,A
|
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for UTC2N3904 electronic component. |
Information | Total 2 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ UTC2N3904.PDF Datasheet ] |
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