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PDF FGA50N100BNTD2 Data sheet ( Hoja de datos )
| Número de pieza | FGA50N100BNTD2 | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA50N100BNTD2
1000 V NPT Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
• RoHS Compliant
Applications
• UPS, Welder
November 2013
General Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25oC
@ TC = 100oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
1
G
E
Ratings
1000
± 25
50
35
200
30
15
150
156
63
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.8
1.2
40.0
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
300
100 tr
Figure 14. Turn-off Characteristics vs.
Gate Resistance
2000
1000
td(off)
10
10
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
20 30 40
Gate Resistance, RG []
50
Figure 15. Turn-on Characteristics vs.
Collector Current
200
100
10
10
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
20 30 40
Gate Resistance, RG []
50
Figure 16. Turn-off Characteristics vs.
Collector Current
1000
100
tr
td(on)
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
10
10 20 30 40 50 60 70 80 90 100
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
50
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
10 TC = 125oC
Eon
Eoff
1
10 20 30 40 50
Gate Resistance, RG []
Common Emitter
VGE = 15V, RG = 10
100 TC = 25oC
TC = 125oC
td(off)
tf
10
10 20 30 40 50 60 70 80 90 100
Collector Current, IC [A]
Fig 18. Switching Loss vs. Collector Current
30
10
Eon
1 Eoff Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
0.1
10 20 30 40 50 60 70 80 90 100
Collector Current, IC [A]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FGA50N100BNTD2.PDF ] | |
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