DataSheet39.com

What is FQA8N100C?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "MOSFET ( Transistor )".


FQA8N100C Datasheet PDF - Fairchild Semiconductor

Part Number FQA8N100C
Description MOSFET ( Transistor )
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


There is a preview and FQA8N100C download ( pdf file ) link at the bottom of this page.





Total 9 Pages



Preview 1 page

No Preview Available ! FQA8N100C datasheet, circuit

FQA8N100C
N-Channel QFET® MOSFET
1000 V, 8 A, 1.45 Ω
Features
• RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A
• Low Gate Charge (Typ. 53 nC)
Low Crss (Typ. 16 pF)
• 100% Avalanche Tested
March 2014
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies.
D
G
D
S
TO-3PN
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA8N100C
1000
8
5
32
±30
850
8
22.5
4.0
225
1.79
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQA8N100C
0.56
0.24
40
©2005 Fairchild Semiconductor Corporation
FQA8N100C Rev C1
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com

line_dark_gray
FQA8N100C equivalent
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = const.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VGS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
VGS
DUT
VDD
VDS (t)
t p t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation
FQA8N100C Rev C1
5
www.fairchildsemi.com


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQA8N100C electronic component.


Information Total 9 Pages
Link URL [ Copy URL to Clipboard ]
Download [ FQA8N100C.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
FQA8N100CThe function is MOSFET ( Transistor ). Fairchild SemiconductorFairchild Semiconductor

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

FQA8     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search