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PDF FDT86106LZ Data sheet ( Hoja de datos )
| Número de pieza | FDT86106LZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDT86106LZ
N-Channel PowerTrench® MOSFET
100 V, 3.2 A, 108 mΩ
Features
General Description
January 2013
Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
HBM ESD protection level > 3 KV typical (Note 4)
100% UIL tested
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench® process
that has been special tailored to minimize the on-state resistance
and yet maintain superior switching performance. G-S zener
has been added to enhance ESD voltage level.
Application
DC - DC Conversion
RoHS Compliant
D
SOT-223
S
D
G
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
3.2
12
12
2.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
12
55
°C/W
Device Marking
86106LZ
Device
FDT86106LZ
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2013 Fairchild Semiconductor Corporation
FDT86106LZ Rev.C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
300
100
10
1
0.5
10-4
SINGLE PULSE
RθJA = 118 oC/W
TA = 25 oC
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10
Figure 13. Single Pulse Maximum Power Dissipation
100
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
10-4
10-3
PDM
SINGLE PULSE
RθJA = 118 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
FDT86106LZ Rev.C2
5
www.fairchildsemi.com
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