|
|
Datasheet FDMC86012 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FDMC86012 | MOSFET, Transistor FDMC86012 N-Channel Power Trench® MOSFET
October 2012
FDMC86012
N-Channel Power Trench® MOSFET
30 V, 88 A, 2.7 mΩ
Features
Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A High performance technology for extremely low rDS(on) Termina | Fairchild Semiconductor | mosfet |
FDM Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FDM-2B | FDM-2B w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
ETC data | | |
2 | FDM100-0045SP | Buck Chopper FDM 100-0045SP
Buck Chopper with Trench Power MOSFET and Schottky Diode
in ISOPLUS i4-PACTM
Preliminary data
3 5 4
ID25 = 100 A = 55 V VDSS RDSon typ. = 5.7 mΩ
1
2
5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ±20 100 80 V V A A
IXYS Corporation data | | |
3 | FDM21-05QC | Q-Class Power MOSFETs
FMD 21-05QC FDM 21-05QC
Q-Class Power MOSFETs
Chopper Topologies in ISOPLUS i4-PACTM
FMD
3 3 5 4 1 2 2 4
ID25 = 21 A = 500 V VDSS RDSon typ. = 190 mΩ
FDM
Preliminary data
1 5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum R IXYS Corporation mosfet | | |
4 | FDM2452NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM2452NZ
July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame w Fairchild Semiconductor mosfet | | |
5 | FDM3300NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM3300NZ
February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead f Fairchild Semiconductor mosfet | | |
6 | FDM3622 | N-Channel PowerTrench MOSFET FDM3622 N-Channel PowerTrench® MOSFET
January 2005
FDM3622 N-Channel PowerTrench® MOSFET
100V, 4.4A, 60mΩ Features
r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Singl Fairchild Semiconductor mosfet | | |
7 | FDM606P | P-Channel 1.8V Logic Level Power Trench MOSFET FDM606P
July 2002
FDM606P
P-Channel 1.8V Logic Level Power Trench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Fairchild Semiconductor mosfet | |
Esta página es del resultado de búsqueda del FDMC86012. Si pulsa el resultado de búsqueda de FDMC86012 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |