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Datasheet FQP12N65 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FQP12N65 | 12A N-Channel MOSFET FQP12N65/FQPF12N65
650V, 12A N-Channel MOSFET
General Description
The FQP12N65 & FQPF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss | Oucan Semi | mosfet |
2 | FQP12N65 | N-Channel MOSFET 极限参数(除非特殊说明,TC=25°C)
参数名称
漏源电压
栅源电压
漏极电流 漏极脉冲电流
TC=25°C TC=100°C
耗散功率(TC=25°C) - 大于 25°C 每摄氏度减少
单脉冲雪崩能量(注 1)
工作结温范围
贮存温度范围
符号
VDS VGS
ID
IDM
PD | TOBA | mosfet |
3 | FQP12N65C | N-Channel MOSFET 12A, 650V, N沟道 场效应晶体管 产品参数规格书
工业型号
FQP12N65C FQPF12N65C
公司型号
H12N65P H12N65F
通俗命名 12N65
H HAOHAI
封装标识
P: TO-220AB F: TO-220FP
包装方式
条管装 盒装箱装
每管数量 50Pcs
12N65 Series
N-Channel MOSFET
每盒数量 1000P | HAOHAI | mosfet |
FQP Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FQP10N20 | 200V N-Channel MOSFET
QFET
& & & & & & '(%)((*+,( -.Ω/*,'(* 0 1 '- 2
3 01 '-3
'((4 !
5
!!$ "
Fairchild Semiconductor mosfet | | |
2 | FQP10N20 | 200V N-Channel MOSFET
QFET
& & & & & & '(%)((*+,( -.Ω/*,'(* 0 1 '- 2
3 01 '-3
'((4 !
5
!!$ "
Fairchild Semiconductor mosfet | | |
3 | FQP10N20 | 200V LOGIC N-Channel MOSFET
QFET
& & & & & & '(%)((*+,( -.Ω/*,'(* 0 1 '- 2
3 01 '-3
'((4 !
5
!!$ "
Fairchild Semiconductor mosfet | | |
4 | FQP10N20C | 200V N-Channel MOSFET FQP10N20C/FQPF10N20C
QFET
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on Fairchild Semiconductor mosfet | | |
5 | FQP10N20L | 200V LOGIC N-Channel MOSFET FQP10N20L
December 2000
QFET
FQP10N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state Fairchild Semiconductor mosfet | | |
6 | FQP10N50CF | N-Channel MOSFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET
December 2006
FRFET
FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET
Features
• 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt c Fairchild Semiconductor mosfet | | |
7 | FQP10N60 | N-Channel MOSFET FQP10N60-FQPF10N60
600V,10A N-Channel MOSFET
General Description
Product Summary
The FQP10N60 & FQPF10N60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss Oucan Semi mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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