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PDF 74HC573D Data sheet ( Hoja de datos )
| Número de pieza | 74HC573D | |
| Descripción | CMOS Digital Integrated Circuits | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 74HC573D (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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CMOS Digital Integrated Circuits Silicon Monolithic
74HC573D
74HC573D
1. Functional Description
• Octal D-Type Latch with 3-State Outputs
2. General
The 74HC573D is a high speed CMOS OCTAL LATCH with 3-STATE OUTPUT fabricated with silicon gate
C2MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
These 8-bit D-type latch is controlled by a latch enable input (LE) and an output enable input (OE).
When the OE input is high, the eight outputs are in a high impedance state.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1) High speed: tpd = 13 ns (typ.) at VCC = 6.0 V
(2) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25
(3) Balanced propagation delays: tPLH ≈ tPHL
(4) Wide operating voltage range: VCC(opr) = 2.0 V to 6.0 V
4. Packaging
SOIC20
©2016 Toshiba Corporation
1
Start of commercial production
2016-03
2016-05-24
Rev.2.0
1 page  
74HC573D
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
VIH
Test Condition
VIL
VOH VIN = VIH or VIL
IOH = -20 µA
VOL VIN = VIH or VIL
IOH = -6 mA
IOH = -7.8 mA
IOL = 20 µA
IOL = 6 mA
IOL = 7.8 mA
IOZ VIN = VIH or VIL
VOUT = VCC or GND
IIN VIN = VCC or GND
ICC VIN = VCC or GND
IO = 0 A
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.18
5.68
Typ.
2.0
4.5
6.0
4.31
5.80
0.0
0.0
0.0
0.17
0.18
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.26
0.26
±0.5
±0.1
4.0
Unit
V
V
V
V
V
V
V
V
V
µA
µA
µA
12.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state leakage
current
Input leakage current
Quiescent supply current
Symbol
VIH
Test Condition
VIL
VOH VIN = VIH or VIL
IOH = -20 µA
VOL VIN = VIH or VIL
IOH = -6 mA
IOH = -7.8 mA
IOL = 20 µA
IOL = 6 mA
IOL = 7.8 mA
IOZ VIN = VIH or VIL
VOUT = VCC or GND
IIN VIN = VCC or GND
ICC VIN = VCC or GND
IO = 0 A
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.13
5.63
Max Unit
V
V
0.50 V
1.35
1.80 V
V
0.1 V
0.1
0.1
0.33
0.33 V
±5.0 µA
±1.0 µA
40.0 µA
©2016 Toshiba Corporation
5
2016-05-24
Rev.2.0
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 74HC573D.PDF ] | |
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