160N60UFD Datasheet PDF - Fairchild Semiconductor
Part Number | 160N60UFD | |
Description | Ultrafast IGBT | |
Manufacturers | Fairchild Semiconductor | |
Logo | ||
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Ultrafast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A
• High input impedance
• CO-PAK, IGBT with FRD: trr = 75nS (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
C
G CE
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC =100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGL160N60UFD
600
± 20
160
80
300
25
280
250
100
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.5
0.83
25
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
|
|
20000
10000
Common Emitter
VCC = 300V, VGE = ± 15V
R
G
=
3.9Ω
T = 25℃
C
TC = 125℃
1000
Eoff
Eon
100
20
40 60 80 100 120 140 160
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
RL = 37.5 Ω
T = 25℃
12 C
9
300 V
6
V = 100 V
CC
200 V
3
0
0 50 100 150 200 250 300 350
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
1000
IC MAX. (Pulsed)
100 IC MAX. (Continuous)
10
DC Operation
50us
100us
1㎳
Single Nonrepetitive
1 Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristic
500
100
10
Safe Operating Area
V =20V, T =100oC
GE C
1
1 10 100
Collector-Emitter Voltage, V [V]
CE
Fig 16. Turn-Off SOA Characteristics
1000
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
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Information | Total 8 Pages | |
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