Datasheet STN8205AA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STN8205AA	Dual N Channel Enhancement Mode MOSFET STN8205AA Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8205AA is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. The	Stanson

STN820 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STN8205D	Dual N Channel Enhancement Mode MOSFET STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state	Stanson
STN8205A	20V N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET STN8205A ■DESCRIPTION 20V N-Channel Enhancement Mode MOSFET ■FEATURE The STN8205A is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. advanced trench technology to provide	Semtron
STN8205AA	Dual N Channel Enhancement Mode MOSFET STN8205AA Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8205AA is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-s	Stanson

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