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PDF STE139N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STE139N65M5 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STE139N65M5
N-channel 650 V, 0.014 Ω typ., 130 A, MDmesh™ V
Power MOSFET in a ISOTOP package
Datasheet - preliminary data
Features
ISOTOP
Order code VDS @Tjmax RDS(on) max ID
STE139N65M5 710 V
0.017 W 130 A
• Very low RDS(on)
• Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance
• 100% avalanche tested
Figure 1. Internal schematic diagram
Applications
• Switching applications
'
*
6
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Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STE139N65M5
Table 1. Device summary
Marking
Packages
139N65M5
ISOTOP
Packaging
Tube
August 2013
DocID025117 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
1 page  
STE139N65M5
Electrical characteristics
Symbol
Parameter
td(v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 6. Switching times
Test conditions
VDD = 400 V, ID = 80 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
(see Figure 19)
Min. Typ. Max. Unit
- 295 - ns
- 56 - ns
- 37 - ns
- 84 - ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
Source-drain current (pulsed)
ISDM (1) Source-drain current (pulsed)
VSD (2) Forward on voltage
ISD = 130 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 130 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 130 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
-
-
-
-
-
130 A
520 A
520 A
1.5 V
570 ns
15 µC
53 A
720 ns
24 µC
68 A
DocID025117 Rev 1
5/13
13
5 Page 
STE139N65M5
Package mechanical data
Figure 20. ISOTOP drawing
DocID025117 Rev 1
0041565_Rev_I
11/13
13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STE139N65M5.PDF ] | |
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