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PDF G30FP Data sheet ( Hoja de datos )
| Número de pieza | G30FP | |
| Descripción | HIGH VOLTAGE DIODES | |
| Fabricantes | GETE ELECTRONICS | |
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HVGT
G30FP
30kV 10mA HIGH VOLTAGE DIODES
G30FP is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Features
High speed switching
High Current
High surge resisitivity for CRT discharge
High reliability design
High Voltage
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Outline Drawings : mm
Lot No.
Cathode Mark
o 3.0
o 0.6
27 min.
12 27 min.
DO-312
Cathode Mark
Type
Mark
G30FP
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Average Output Current
IO Ta=25°C,Resistive Load
Suege Current
I FSM
Junction Temperature
Tj
Allowable Operation Case Temperature
Storage Temperature
Tc
Tstg
G30FP
30
10
0.8
125
120
-40 to +125
Units
kV
mA
A peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF at 25°C,IF =IF(AV)
Maximum Reverse Current
IR1 at 25°C,VR =VRRM
IR2 at 100°C,VR =VRRM
Maximum Reverse Recovery Time
Trr at 25°C
G30FP
55
2.0
5.0
100
Units
V
uA
uA
nS
Junction Capacitance
Cj at 25°C,VR=0V,f=1MHz
--
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:[email protected]
2015
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet G30FP.PDF ] | |
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