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What is FF450R12KE4?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "IGBT-Module".


FF450R12KE4 Datasheet PDF - Infineon

Part Number FF450R12KE4
Description IGBT-Module
Manufacturers Infineon 
Logo Infineon Logo 


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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF450R12KE4
62mmC-SerienModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode
62mmC-seriesmodulewithtrench/fieldstopIGBT4andEmitterControlleddiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VorläufigeDaten
PreliminaryData
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1200
450
520
900
2400
+/-20
V

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 17,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 1,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 1,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 9000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,0
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,0
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,75 2,15
2,00
2,05
V
V
V
5,2 5,8 6,4 V
 3,70  µC
 1,9 
 28,0  nF
 1,10  nF
  5,0 mA
  400 nA
0,20
 0,25 
0,27
0,045
 0,05 
0,055
0,50
 0,60 
0,62
0,10
 0,16 
0,18
19,0
 30,0 
36,0
33,0
 50,0 
56,0
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
 1800 
A
  0,062 K/W
 0,031
K/W
-40  150 °C
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.2
1

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FF450R12KE4 equivalent
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF450R12KE4
SchaltverlusteIGBT,Wechselrichter(typisch)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=450A,VCE=600V
220
Eon, Tvj = 125°C
200 Eoff, Tvj = 125°C
Eon, Tvj = 150°C
180 Eoff, Tvj = 150°C
VorläufigeDaten
PreliminaryData
TransienterWärmewiderstandIGBT,Wechselrichter
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
0,1
ZthJC : IGBT
160
140
120
0,01
100
80
60
40
20
0 0,001
0 1 2 3 4 5 6 7 8 9 10
0,001
RG []
i: 1 2 3 4
ri[K/W]: 0,00372 0,02046 0,01984 0,01798
τi[s]: 0,01
0,02
0,05
0,1
0,01 0,1
t [s]
1
10
SichererRückwärts-ArbeitsbereichIGBT,Wechselrichter
(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1,Tvj=150°C
1000
IC, Modul
900 IC, Chip
800
DurchlasskennliniederDiode,Wechselrichter(typisch)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
900
Tvj = 25°C
810 Tvj = 125°C
Tvj = 150°C
720
700 630
600 540
500 450
400 360
300 270
200 180
100 90
0
0 200 400 600 800 1000 1200 1400
VCE [V]
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.2
5


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
FF450R12KE4The function is IGBT-Module. InfineonInfineon

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