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What is IPA65R1K0CE?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "MOSFET ( Transistor )".


IPA65R1K0CE Datasheet PDF - Infineon

Part Number IPA65R1K0CE
Description MOSFET ( Transistor )
Manufacturers Infineon 
Logo Infineon Logo 


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IPA65R1K0CE
MOSFET
650VCoolMOS™CEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PCSilverbox,Adapters,LCD&PDPTVandindoorLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Id.typ
Qg.typ
ID,pulse
Eoss@400V
700
1000
7.2
15.3
12
1.5
V
m
A
nC
A
µJ
Type/OrderingCode
IPA65R1K0CE
Package
PG-TO 220 FullPAK
Marking
65S1K0CE
TO-220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-19

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IPA65R1K0CE equivalent
650VCoolMOS™CEPowerTransistor
IPA65R1K0CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
650
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
0.86 1.00
2.22 -
5.5 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.2mA
µA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
VGS=10V,ID=1.5A,Tj=25°C
VGS=10V,ID=1.5A,Tj=150°C
f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
328 -
23 -
14 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 58.5 - pF ID=constant,VGS=0V,VDS=0...480V
-
6.6 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2;seetable9
-
5.2 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2;seetable9
-
41 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2;seetable9
-
13.6 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2;seetable9
Min.
-
-
-
-
Values
Typ. Max.
1.8 -
8-
15.3 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=2.2A,VGS=0to10V
nC VDD=480V,ID=2.2A,VGS=0to10V
nC VDD=480V,ID=2.2A,VGS=0to10V
V VDD=480V,ID=2.2A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Final Data Sheet
5 Rev.2.0,2016-02-19


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Part NumberDescriptionMFRS
IPA65R1K0CEThe function is MOSFET ( Transistor ). InfineonInfineon

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