AUIRF7319Q Datasheet PDF - Infineon
Part Number | AUIRF7319Q | |
Description | Dual N and P Channel MOSFET | |
Manufacturers | Infineon | |
Logo | ||
There is a preview and AUIRF7319Q download ( pdf file ) link at the bottom of this page. Total 11 Pages |
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AUIRF7319Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
N-CHANNEL MOSFET
N-CH P-CH
S1 1
G1 2
8 D1
7 D1
VDSS
30V -30V
S2 3
6 D2 RDS(on) typ. 0.023 0.042
G2 4
5 D2
max. 0.029 0.058
P-CHANNEL MOSFET
ID
6.5A -4.9A
Top View
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
G
Gate
Base part number
AUIRF7319Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
SO-8
AUIRF7319Q
D
Drain
S
Source
Orderable Part Number
AUIRF7319QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
N-Channel
30
P-Channel
-30
6.5 -4.9
5.2 -3.9
30 -30
2.5 -2.5
2.0
1.3
82 140
4.0 -2.8
0.20
± 20
5.0 -5.0
-55 to + 150
Units
V
A
W
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJA Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30
|
|
N-Channel
AUIRF7319Q
1200
900
600
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
300 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 5.8A
16
VDS = 15V
12
8
4
0
0 10 20 30 40
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
5
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x ZthJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
2015-9-30
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AUIRF7319Q electronic component. |
Information | Total 11 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ AUIRF7319Q.PDF Datasheet ] |
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