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What is AUIRF7343Q?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Dual N and P Channel MOSFET".


AUIRF7343Q Datasheet PDF - Infineon

Part Number AUIRF7343Q
Description Dual N and P Channel MOSFET
Manufacturers Infineon 
Logo Infineon Logo 


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AUTOMOTIVE GRADE
AUIRF7343Q
Features
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
  N-CHANNEL MOSFET
N-CH P-CH
S1 1
G1 2
8 D1
7 D1
VDSS
55V -55V
S2 3
6 D2 RDS(on) typ. 0.043 0.095
G2 4
5 D2
max. 0.050 0.105
P-CHANNEL MOSFET
ID
4.7A -3.4A
Top View
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional features of
these Automotive qualified HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and
dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
AUIRF7343Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7343Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7343QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Max.
N-Channel
P-Channel
55 -55
4.7 -3.4
3.8 -2.7
38 -27
2.0
1.3
Units
V
A 
W
EAS
IAR
EAR
VGS
dv/dt
TJ
TSTG
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
72 114 
4.7 -3.4
0.20
± 20  
5.0 -5.0
-55 to + 150
mJ
A
mJ
V
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30

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AUIRF7343Q equivalent
 
N-Channel
AUIRF7343Q
1200
1000
800
VGS = 0V, f = 1MHz
CCirssss
=
=
CCggsd
+
Cgd ,
Cds
SHORTED
Coss = Cds + Cgd
Ciss
600
400
200
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 4.5A
16
12
VDS = 48V
VDS = 30V
VDS = 12V
8
4
0
0 10 20 30
QG, Total Gate Charge (nC)
40
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
 5
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x ZthJA + TA
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
2015-9-30


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
AUIRF7343QThe function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier
AUIRF7343QThe function is Dual N and P Channel MOSFET. InfineonInfineon

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