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What is STP14NF10FP?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-CHANNEL Power MOSFET".


STP14NF10FP Datasheet PDF - STMicroelectronics

Part Number STP14NF10FP
Description N-CHANNEL Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STB14NF10
STP14NF10 STP14NF10FP
N-CHANNEL 100V - 0.115 - 15A TO-220/TO-220FP/D2PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB14NF10
STP14NF10
STP14NF10FP
100 V
100 V
100 V
<0.13
<0.13
<0.13
15 A
15 A
10 A
s TYPICAL RDS(on) = 0.115
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been de-
signed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended for
any applications with low gate drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
3
2
1
TO-220FP
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
June 2002
.
STB14NF10
STP14NF10
15
10
60
60
0.4
------
Value
STP14NF10FP
100
100
± 20
10
6.3
40
25
0.17
9
70
2000
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
-55 to 175
°C
(1) ISD 14A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD= 50V
1/11

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STP14NF10FP equivalent
Gate Charge vs Gate-source Voltage
STB14NF10 STP14NF10 STP14NF10FP
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
5/11


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Part Details

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Information Total 11 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
STP14NF10FPThe function is N-CHANNEL Power MOSFET. STMicroelectronicsSTMicroelectronics

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