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Número de pieza | MBR6060PT | |
Descripción | Schottky Barrier Rectifier ( Diode ) | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR6060PT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR6060PT
FEATURES
·Plastic material used carriers Unerwriter Laboratory
·Metal silicon rectifier, majonty carrier conduction
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Surge Capability,High Current Capability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in low voltage ,high frequency inverters,free wheeling and
polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltag
VALUE UNIT
60 V
42 V
IF(AV)
IFSM
IRRM
TJ
Tstg
dv/dt
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed
on rated load conditions
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
60
420
1.0
Junction Temperature
-65~150
A
A
A
℃
Storage Temperature Range
-65~175 ℃
Voltage Rate of Change (Rated VR)
1,000 V/μs
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBR6060PT.PDF ] |
Número de pieza | Descripción | Fabricantes |
MBR6060PT | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
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MBR6060PT | (MBR6035PT - MBR60150PT) Schottky Barrier Rectifiers | Taiwan Semiconductor |
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