74HC30-Q100 Datasheet PDF - NXP Semiconductors
Part Number | 74HC30-Q100 | |
Description | 8-input NAND gate | |
Manufacturers | NXP Semiconductors | |
Logo | ||
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Preview 1 page No Preview Available ! 74HC30-Q100; 74HCT30-Q100
8-input NAND gate
Rev. 1 — 30 January 2013
Product data sheet
1. General description
The 74HC30-Q100; 74HCT30-Q100 is an 8-input NAND gate. Inputs include clamp
diodes. This enables the use of current limiting resistors to interface inputs to voltages in
excess of VCC.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from 40 C to +85 C and from 40 C to +125 C
Complies with JEDEC standard JESD7A
Input levels:
For 74HC30-Q100: CMOS level
For 74HCT30-Q100: TTL level
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )
Multiple package options
3. Ordering information
Table 1. Ordering information
Type number
Package
Temperature range Name
74HC30D-Q100 40 C to +125 C SO14
74HCT30D-Q100
74HC30PW-Q100 40 C to +125 C TSSOP14
74HCT30PW-Q100
Description
plastic small outline package; 14 leads;
body width 3.9 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
Version
SOT108-1
SOT402-1
|
|
NXP Semiconductors
74HC30-Q100; 74HCT30-Q100
8-input NAND gate
8. Recommended operating conditions
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter
Conditions
VCC
VI
VO
Tamb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
9. Static characteristics
74HC30-Q100
Min Typ Max
2.0 5.0 6.0
0 - VCC
0 - VCC
40 - +125
- - 625
- 1.67 139
- - 83
74HCT30-Q100
Min Typ Max
4.5 5.0 5.5
0 - VCC
0 - VCC
40 - +125
---
- 1.67 139
---
Unit
V
V
V
C
ns/V
ns/V
ns/V
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74HC30-Q100
VIH HIGH-level VCC = 2.0 V
input voltage VCC = 4.5 V
1.5 1.2 -
1.5
-
1.5
-V
3.15 2.4 - 3.15
-
3.15
-V
VCC = 6.0 V
4.2 3.2 -
4.2
-
4.2
-V
VIL LOW-level VCC = 2.0 V
input voltage VCC = 4.5 V
- 0.8 0.5
-
0.5
-
0.5 V
- 2.1 1.35 -
1.35
-
1.35 V
VCC = 6.0 V
- 2.8 1.8
-
1.8
-
1.8 V
VOH HIGH-level
VI = VIH or VIL
output voltage
IO = 20 A; VCC = 2.0 V 1.9 2.0
-
1.9
-
1.9
-V
IO = 20 A; VCC = 4.5 V 4.4 4.5 -
4.4
-
4.4
-V
IO = 20 A; VCC = 6.0 V 5.9 6.0 -
5.9
-
5.9
-V
IO = 4.0 mA; VCC = 4.5 V 3.98 4.32 -
3.84
-
3.7
-V
IO = 5.2 mA; VCC = 6.0 V 5.48 5.81 -
5.34
-
5.2
-V
VOL LOW-level
VI = VIH or VIL
output voltage
IO = 20 A; VCC = 2.0 V
- 0 0.1
-
0.1
-
0.1 V
IO = 20 A; VCC = 4.5 V
- 0 0.1
-
0.1
-
0.1 V
IO = 20 A; VCC = 6.0 V
- 0 0.1
-
0.1
-
0.1 V
IO = 4.0 mA; VCC = 4.5 V
- 0.15 0.26
-
0.33
-
0.4 V
IO = 5.2 mA; VCC = 6.0 V
- 0.16 0.26
-
0.33
-
0.4 V
II input leakage VI = VCC or GND;
current
VCC = 6.0 V
- - 0.1 -
1
-
1 A
ICC
supply current VI = VCC or GND; IO = 0 A;
-
- 2.0
-
20
-
40 A
VCC = 6.0 V
74HC_HCT30_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 January 2013
© NXP B.V. 2013. All rights reserved.
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