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PDF AMCC431P Data sheet ( Hoja de datos )
| Número de pieza | AMCC431P | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
• Fast switching speed
• High performance trench technology
AMCC431P
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
-30 60 @ VGS = -10V
90 @ VGS = -4.5V
ID (A)
-5.9
-4.8
DFN3x3
Top View
S
S1
S2
8D
7 DG
S3
6D
G4
5D
D
P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
-30
±20
-5.9
-4.8
IDM ±50
IS
TA=25oC
TA=70oC
PD
-2.1
3.1
2.0
TJ, Tstg -55 to 150
V
A
A
W
oC
THERMALRESISTANCERATINGS
Parameter
MaximumJunction-to-Ambienta
t <=10 sec
Steady State
Symbol
RθJA
Maximum Units
35 oC/W
81 oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AMCC431_A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AMCC431P.PDF ] | |
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