UT54ACTQ16245 Datasheet PDF - Aeroflex Circuit Technology
Part Number | UT54ACTQ16245 | |
Description | RadHard CMOS 16-bit Bidirectional Transceiver | |
Manufacturers | Aeroflex Circuit Technology | |
Logo | ||
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UT54ACTQ16245
RadHard CMOS 16-bit Bidirectional Transceiver, TTL Inputs, and
Three-State Outputs
Datasheet
May 16, 2012
www.aeroflex.com/radhard
FEATURES
16 non-inverting bidirectional buffers with three-state out-
puts
Guaranteed simultaneously switching noise level and
dynamic threshold performance
Separate control logic for each byte
0.6m Commercial RadHardTM CMOS
- Total dose: 100K rad(Si)
- Single Event Latchup immune
High speed, low power consumption
Output source/sink 24mA
Standard Microcircuit Drawing 5962-06244
- QML compliant part
Package:
- 48-lead flatpack, 25 mil pitch (.390 x .640)
DESCRIPTION
The 16-bit wide UT54ACTQ16245 transceiver is built using
Aeroflex’s Commercial RadHardTM epitaxial CMOS technol-
ogy and is ideal for space applications. This high speed, low
power UT54ACTQ16245 transceiver is designed to perform
asynchronous two-way communication and signal buffering.
Balanced outputs and low "on" output impedance make the
UT54ACTQ16245 well suited for driving high capacitance
loads and low impedance backplanes. The Transmit/Receive
input (T/R) controls the direction of data flow through the de-
vice. The output enable input (OEn, active low) overrides the
direction control (T/R) and disables both the A and B ports by
placing them in a high impedance state. These signals can be
driven from either port A or B. The direction and output enable
controls operate these devices as either two independent 8-bit
transceivers or one 16-bit transceiver
LOGIC SYMBOL
OE1 (48)
OE2 (25)
(1)
T/R1
G1
G2 2EN1 (BA)
2EN2 (AB)
1EN1 (BA)
1EN2 (AB)
(47)
A0
A1 (46)
(44)
A2
(43)
A3
(41)
A4
(40)
A5
(38)
A6
(37)
A7
(36)
A8
(35)
A9
(33)
A10
(32)
A11
(30)
A12
(29)
A13
(27)
A14
(26)
A15
11
12
21
22
(24)
T/R2
(2)
B0
(3)
B1
(5)
B2
(6)
B3
(8)
B4
(9)
(11) B5
B6
(12)
(13) B7
B8
(14)
B9
(16)
B10
(17)
B11
(19)
B12
(20)
(22)
B13
B14
(23)
B15
PIN DESCRIPTION
Pin Names
Description
OEn
T/Rn
Output Enable Input (Active Low)
Direction Control Inputs
A0-A15
B0-B15
Side A Inputs or 3-State Outputs
Side B Inputs or 3-State Outputs
FUNCTION TABLE
ENABLE
OEn
DIRECTION
T/Rn
LL
LH
HX
OPERATION
B Data To A Bus
A Data To B Bus
Isolation, High-Z State on
Bus A and Bus B
1
|
|
DC ELECTRICAL CHARACTERISTICS 1
( -55C < TC < +125C)
SYMBOL
PARAMETER
VIL Low level input voltage2
VIH High level input voltage2
IIN Input leakage current
IOZ Three-state output leakage current
IOS Short-circuit output current 3,4
VOL1 Low-level output voltage5
VOL2 Low-level output voltage5,6
VOH1 High-level output voltage5
VOH2 High-level output voltage5, 6
VIC+ Positive input clamp voltage
VIC- Negative input clamp voltage
Ptotal Power dissipation 7, 8, 9
CONDITION
MIN
VDD from 4.5V to 5.5V
VDD from 4.5 V to 5.5V
2.0
VDD from 4.5V to 5.5V
VIN = VDD or VSS
-1
VDD from 4.5V to 5.5V
VIN = VDD or VSS
-10
VO = VDD or VSS
VDD from 4.5V to 5.5V
-600
IOL= 24mA
IOL= 24mA
IOL= 100A
VIN = 2.0V or 0.8V
VDD = 4.5V to 5.5V
IOL= 50 mA
VIN = 2.0V or 0.8V
VDD = 5.5V
IOH= -24 mA
IOL= -24mA
IOH= -100A
VIN = 2.0V or 0.8V
VDD = 4.5V to 5.5V
-55C, 25C
+125C
-55C, 25C
+125C
-55C, 25C
+125C
VDD - 0.64
VDD - 0.8
VDD - 0.2
IOH= -50 mA
VIN = 2.0V or 0.8V
VDD = 5.5V
-55C, 25C
+125C
VDD - 1.1
VDD - 1.3
For input under test, IIN = 18mA
VDD = 0.0V
0.4
For input under test, IIN = -18mA
VDD = open
-1.5
CL = 20pF
VDD from 4.5V to 5.5V
MAX
0.8
1
10
600
0.35
0.5
0.2
0.8
1.0
1.5
-0.4
1.5
UNIT
V
V
A
A
mA
V
V
V
V
V
V
mW/MHz
5
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Information | Total 12 Pages | |
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