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What is ME8107-G?

This electronic component, produced by the manufacturer "Matsuki", performs the same function as "P-Channel Enhancement Mode MOSFET".


ME8107-G Datasheet PDF - Matsuki

Part Number ME8107-G
Description P-Channel Enhancement Mode MOSFET
Manufacturers Matsuki 
Logo Matsuki Logo 


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ME8107/ME8107-G
P-Channel Enhancement Mode MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME8107 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
FEATURES
RDS(ON)7.2m@VGS=-10V
RDS(ON)12m@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
e Ordering Information: ME8107(Pb-free)
ME8107-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation*
Operating Junction Temperature
TA=25
TA=70
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
-35
±20
-13
-10
-52
2
1.3
-55 to 150
62.5
* The device mounted on 1in2 FR4 board with 2 oz copper
1.2
Mar, 2012-Ver1.3
Unit
V
V
A
A
W
℃/W
01

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ME8107-G equivalent
ME8107/ME8107-G
P-Channel Enhancement Mode MOSFET, ESD Protected
SOP-8 Package Outline
MILLIMETERS (mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
1.2
Mar, 2012-Ver1.3
05


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ME8107-G electronic component.


Information Total 5 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
ME8107-GThe function is P-Channel Enhancement Mode MOSFET. MatsukiMatsuki

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