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PDF 50N06 Data sheet ( Hoja de datos )
| Número de pieza | 50N06 | |
| Descripción | Power-Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 50N06 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N06
Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V DS
R DS(on),max SMDversion
ID
60 V
15 mΩ
50 A
Type
50N06
50N06
2
Package
Marking
1
3
TO-251
50N06
1
23
TO-252
50N06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D TC =25 °C1)
Pulsed drain current
I D,pulse T C=25 °C2)
Avalanche energy, single pulse
E AS I D=50 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=48 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 160A
2) See figure 3
1
Value
50
400
810
6
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N06
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
280
10V 7 V
240
6.5 V
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
15
5V
5.5 V
200
10
160
120
80
40
5.5 V
5V
5
6.5 V
7V
10 V
00
0
12
V DS [V]
00
3 0 40 80 120 160 200
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
240 240
220
200 200
180
160 160
140
120 120
100
80 80
60
40 40
175 °C
20 25 °C
0
01234567
V GS [V]
0
0 40 80 120 160 200
I D [A]
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 50N06.PDF ] | |
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