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PDF MMBT5401LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT5401LT1 | |
| Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | TGS | |
| Logotipo |  |
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TIGER ELECTRONIC CO.,LTD
MMBT5401LT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT5401LT1 is designed for general purpose applications
requiring high breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
• Complements to NPN Type MMBT5551LT1.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .............................................................................................. -55~+150 °C
Junction Temperature ..................................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 160 V
VCEO Collector to Emitter Voltage .................................................................................... 150 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ......................................................................................................... 500mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
Min.
160
150
5
-
-
-
-
-
50
60
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
200
500
1
1
-
240
-
300
6
Unit
V
V
V
nA
mV
mV
V
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=120V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHZ
TIGER ELECTRONIC CO.,LTD
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MMBT5401LT1.PDF ] | |
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