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PDF SS8050LT1 Data sheet ( Hoja de datos )
| Número de pieza | SS8050LT1 | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Elite | |
| Logotipo |  |
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SS8050LT1
NPN Epitaxial Silicon Transistor
1.25W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS B PUSH-PULL
OPERATION
SOT-23
Collector-Emitter Voltage: VCEO= 25V
Collector Dissipation: PC= 625mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
40
25
5
1500
625
150
-65~+150
V
V
V
mA
mW
oC
oC
Tolerance : 0.1mm
Dimensions (Unit : mm)
1. Emitter 2. Base 3. Collector
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBEF
fT
IC= 100µA, IE= 0
IC= 0.1mA, IB= 0
IE= 100µA, IC= 0
VCB= 40V, IE= 0
VCE= 20V, IB= 0
VEB= 5V, IC= 0mA
VCE= 1V, IC= 50mA
VCE= 1V, IC= 500mA
IC= 500mA, IB= 50mA
IC= 500mA, IB= 50mA
IE= 100mA
VCE= 6V, IC= 20mA
f= 30MHz
Min Max Unit
40 V
25 V
6V
0.1
0.1
0.1
120 350
µA
µA
µA
40
0.5 V
1.2 V
1.6 V
100 MHz
hFE(1) CLASSIFICATION
Classification
L
hFE(1)
120-200
Device Marking
SS8050LT1=Y1
H
200-350
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected]
Part No. : SS8050LT1
Page: 1 / 1
1 page | ||
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| PDF Descargar | [ Datasheet SS8050LT1.PDF ] | |
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