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What is IS43TR82560CL?

This electronic component, produced by the manufacturer "ISSI", performs the same function as "2Gb DDR3 SDRAM".


IS43TR82560CL Datasheet PDF - ISSI

Part Number IS43TR82560CL
Description 2Gb DDR3 SDRAM
Manufacturers ISSI 
Logo ISSI Logo 


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IS43/46TR16128C, IS43/46TR16128CL,
IS43/46TR82560C, IS43/46TR82560CL
256Mx8, 128Mx16 2Gb DDR3 SDRAM
FEATURES
Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
High speed data transfer rates with system
frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based
on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or
Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
OPTIONS
Configuration:
256Mx8
128Mx16
Package:
96-ball FBGA (9mm x 13mm) for x16
78-ball FBGA (8mm x 10.5mm) for x8
ADVANCED INFORMATION
JANUARY 2015
Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8
only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
ADDRESS TABLE
Parameter
Row Addressing
Column Addressing
Bank Addressing
Page size
Auto Precharge
Addressing
BL switch on the fly
256Mx8
A0-A14
A0-A9
BA0-2
1KB
A10/AP
A12/BC#
128Mx16
A0-A13
A0-A9
BA0-2
2KB
A10/AP
A12/BC#
SPEED BIN
Speed Option
15H
125K
107M
JEDEC Speed Grade DDR3-1333H DDR3-1600K DDR3-1866M
CL-nRCD-nRP
9-9-9
11-11-11
13-13-13
tRCD,tRP(min)
13.5
13.75
13.91
Note: Faster speed options are backward compatible to slower speed options.
093N
DDR3-2133N
14-14-14
13.09
Units
tCK
ns
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised
to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product
can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use
in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. www.issi.com
Rev. 00A
12/17/2014
1

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IS43TR82560CL equivalent
IS43/46TR16128C, IS43/46TR16128CL,
IS43/46TR82560C, IS43/46TR82560CL
VDDQ
VSSQ
VDD
VSS
VREFDQ
VREFCA
ZQ
Supply
Supply
Supply
Supply
Supply
Supply
Supply
DQ Power Supply: 1.5 V +/- 0.075 V for standard voltage or 1.35V +0.1V, -0.067V for low voltage
DQ Ground
Power Supply: 1.5 V +/- 0.075 V for standard voltage or 1.35V +0.1V, -0.067V for low voltage
Ground
Reference voltage for DQ
Reference voltage for CA
Reference Pin for ZQ calibration
Note: Input only pins (BA0-BA2, A0-A14, RAS#, CAS#, WE#, CS#, CKE, ODT, and RESET#) do not supply termination.
Integrated Silicon Solution, Inc. www.issi.com
Rev. 00A
12/17/2014
5


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
IS43TR82560CThe function is 2Gb DDR3 SDRAM. ISSIISSI
IS43TR82560CLThe function is 2Gb DDR3 SDRAM. ISSIISSI

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