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Número de pieza | CRS20I30A | |
Descripción | Schottky Barrier Rectifier ( Diode ) | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CRS20I30A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS20I30A
Secondary Rectification in Switching Regulators
Reverse-Current Protection in Mobile Devices
• Forward voltage: VFM = 0.49 V (max) @ IFM = 2.0 A
• Forward current (AV): IF (AV) = 2.0 A
• Repetitive peak reverse voltage: VRRM = 30 V
• Suitable for high-density board assembly due to the use of a small
surface-mount package, “S-FLATTM”
②
CRS20I30A
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
0.9 ± 0.1
+ 0.2
1.6 − 0.1
①
0.16
Repetitive peak reverse voltage
Forward current (AV)
VRRM
IF (AV)
30
2.0 (Note 1)
V
A
① ANODE
② CATHODE
Peak one-cycle surge current
IFSM
20 (50 Hz)
A
Junction temperature
Storage temperature
Tj 150 °C
Tstg
-55 to 150
°C
JEDEC
JEITA
⎯
⎯
Note
: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
3-2A1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.013 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ta = 48°C : Device mounted on a ceramic board
Board size : 50 mm × 50 mm
Soldering size : 2 mm × 2 mm
Board thickness: 0.64 mm
Rectangular waveform (α = 180°), VR = 15 V
1 2011-05-06
1 page Surge current
24
Ta = 25°C
20 f = 50 Hz
16
12
8
4
0
1
35
10
30 50
100
Number of cycles
100
Pulse test
10
1
15 V
0.1
IR – Tj
(typ.)
VR = 30 V
20 V
3V
5V
10 V
0.01
0.001
0
20 40 60 80 100 120 140
Junction temperature Tj (°C)
160
CRS20I30A
1000
500
300
100
50
30
10
1
Cj – VR
(typ.)
f = 1 MHz
Ta = 25°C
35
10
30 50
Reverse voltage VR (V)
100
PR (AV) – VR
0.8
Rectangular
0.7 waveform
(typ.)
0.6 VR
0.5
0° α 360°
Conduction angle α
Tj = 150°C
0.4
0.3
α=60°
0.2
300°
240°
180°
120°
DC
0.1
0
0 10 20 30
Reverse voltage VR (V)
5 2011-05-06
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet CRS20I30A.PDF ] |
Número de pieza | Descripción | Fabricantes |
CRS20I30A | Schottky Barrier Rectifier ( Diode ) | Toshiba |
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