CBS10S30 Datasheet PDF - Toshiba
Part Number | CBS10S30 | |
Description | Schottky Barrier Diode | |
Manufacturers | Toshiba | |
Logo | ||
There is a preview and CBS10S30 download ( pdf file ) link at the bottom of this page. Total 6 Pages |
Preview 1 page No Preview Available ! Schottky Barrier Diode Silicon Epitaxial
CBS10S30
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
CBS10S30
CST2B
1: Cathode
2: Anode
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 20
Average rectified current
IO (Note 1)
1.0
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
Start of commercial production
2013-09
1 2014-02-24
Rev.3.0
|
|
Package Dimensions
CBS10S30
Unit: mm
Weight: 0.7 mg (typ.)
TOSHIBA: 1-1V1S
Nickname: CST2B
Package Name(s)
5
2014-02-24
Rev.3.0
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CBS10S30 electronic component. |
Information | Total 6 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ CBS10S30.PDF Datasheet ] |
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