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What is IS42R83200D?

This electronic component, produced by the manufacturer "ISSI", performs the same function as "256-MBIT SYNCHRONOUS DRAM".


IS42R83200D Datasheet PDF - ISSI

Part Number IS42R83200D
Description 256-MBIT SYNCHRONOUS DRAM
Manufacturers ISSI 
Logo ISSI Logo 


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IS42R83200D, IS42R16160D
IS45R83200D, IS45R16160D
32Meg x 8, 16Meg x16
256-MBIT SYNCHRONOUS DRAM
MARCH 2010
FEATURES
• Clock frequency: 133, 100 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 2.5V + 0.2V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 16 ms (A2 grade) or
64 ms (commercial, industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
OPTIONS
• Package:
54-pin TSOP-II (x8 and x16)
54-ball BGA (x16 only)
• Operating Temperature Range:
Commercial (0oC to +70oC)
Industrial (-40oC to +85oC)
Automotive Grade A1 (-40oC to +85oC)
Automotive Grade A2 (-40oC to +105oC)
OVERVIEW
ISSI's 256Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The 256Mb SDRAM is organized as follows.
IS42/45R83200D IS42/45R16160D
8M x 8 x 4 Banks 4M x16x4 Banks
54-pin TSOPII 54-pin TSOPII
54-ball BGA
KEY TIMING PARAMETERS
Parameter
Clk Cycle Time
CAS Latency = 3
CAS Latency = 2
Clk Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from Clock
CAS Latency = 3
CAS Latency = 2
-75
7.5
10
133
100
5.4
6
Unit
ns
ns
Mhz
Mhz
ns
ns
ADDRESS TABLE
Parameter
32M x 8
Configuration
8M x 8 x 4
banks
Refresh Count
Com./Ind.
A1
A2
8K/64ms
8K/64ms
8K/16ms
Row Addresses
A0-A12
Column Addresses
A0-A9
Bank Address Pins
BA0, BA1
Auto Precharge Pins
A10/AP
16M x 16
4M x 16 x 4
banks
8K/64ms
8K/64ms
8K/16ms
A0-A12
A0-A8
BA0, BA1
A10/AP
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
03/02/2010
1

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IS42R83200D equivalent
IS42R83200D, IS42R16160D
IS45R83200D, IS45R16160D
PIN CONFIGURATION
54-ball fBGA for x16 (Top View) (8.00 mm x 13.00 mm Body, 0.8 mm Ball Pitch)
package code: B
1 2 3 4 5 6 7 8 9
A
B VSS DQ15 VSSQ
C DQ14 DQ13 VDDQ
D DQ12 DQ11 VSSQ
E DQ10 DQ9 VDDQ
F DQ8 NC VSS
G DQMH CLK CKE
H A12 A11 A9
J A8 A7 A6
VSS A5 A4
VDDQ DQ0 VDD
VSSQ DQ2 DQ1
VDDQ DQ4 DQ3
VSSQ DQ6 DQ5
VDD DQML DQ7
CAS RAS WE
BA0 BA1 CS
A0 A1 A10
A3 A2 VDD
PIN DESCRIPTIONS
A0-A12
Row Address Input
A0-A8
Column Address Input
BA0, BA1
Bank Select Address
DQ0 to DQ15 Data I/O
CLK
System Clock Input
CKE
Clock Enable
CS Chip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
03/02/2010
WE
DQML
DQMH
Vdd
Vss
Vddq
Vssq
NC
Write Enable
x16 Lower Byte Input/Output Mask
x16 Upper Byte Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
5


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Featured Datasheets

Part NumberDescriptionMFRS
IS42R83200DThe function is 256-MBIT SYNCHRONOUS DRAM. ISSIISSI

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