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PDF SIS902DN Data sheet ( Hoja de datos )
| Número de pieza | SIS902DN | |
| Descripción | Dual N-Channel 75-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Dual N-Channel 75-V (D-S) MOSFET
SiS902DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.186 at VGS = 10 V
75
0.228 at VGS = 4.5 V
ID (A)
4e
4e
Qg (Typ.)
2.1 nC
PowerPAK 1212-8
3.30 mm
D1
8
D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Bottom View
Ordering Information: SiS902DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• POL
D1
D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
75
± 20
V
TC = 25 °C
4e
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
4e
3a, b
2.4a, b
A
Pulsed Drain Current
IDM 8
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
2
0.2
mJ
TC = 25 °C
15.4
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
9.9
3.1a, b
W
TA = 70 °C
2a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 64804
S09-0661-Rev. A, 20-Apr-09
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10 TJ = 150 °C
TJ = 25 °C
1
0.5
ID = 3 A
0.4
0.3
0.2
0.1
SiS902DN
Vishay Siliconix
TJ = 125 °C
TJ = 25 °C
0.1
0.0 0.5 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.5
2.4
0.0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
2.1
ID = 250 µA
1.8
1.5
40
30
20
10
1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
10
Limited by RDS(on)*
0
0.001 0.01 0.1
1
10 100
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1
1 ms
10 ms
100 ms
0.1
1s
10 s
TA = 25 °C
Single Pulse
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 64804
S09-0661-Rev. A, 20-Apr-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SIS902DN.PDF ] | |
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